Kim Ch.-U. (Eds.) Electromigration in Thin Films and Electronic Devices: Materials and Reliability

формат pdf
размер 6.71 МБ
добавлен 27 декабря 2011 г.

Woodhead Publishing Limited, 2011, 340 pages

Understanding and limiting electromigration in thin films is essential to the continued development of advanced copper interconnects for integrated circuits. Electromigration in thin films and electronic devices provides an up-to-date review of key topics in this commercially important area.

Part one consists of three introductory chapters, covering modeling of electromigration phenomena, modeling electromigration using the peridynamics approach and simulation and x-ray microbeam studies of electromigration. Part two deals with electromigration issues in copper interconnects, including x-ray microbeam analysis, voiding, microstructural evolution and electromigration failure. Finally, part three covers electromigration in solder, with chapters discussing topics such as electromigration-induced microstructural evolution and electromigration in flip-chip solder joints.

Смотрите также

Baca A.G., Ashby C.I.H. Fabrication of GaAs Devices

формат pdf
размер 1.62 МБ
добавлен 17 декабря 2011 г.

The Institution of Engineering and Technology, 2009, 350 pages. Scope: This book provides fundamental and practical information on all aspects of GaAs processing. The book also gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography, and dry etching. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processin...

Basu S. (ed.). Crystalline Silicon - Properties and Uses

формат pdf
размер 29.25 МБ
добавлен 23 января 2012 г.

InTech, 2011. - 344 pages. The exciting world of crystalline silicon is the source of the spectacular advancement of discrete electronic devices and solar cells. The exploitation of ever changing properties of crystalline silicon with dimensional transformation may indicate more innovative silicon based technologies in near future. For example, the discovery of nanocrystalline silicon has largely overcome the obstacles of using silicon as optoele...

Brennan K.F., Brown A.S. Theory of Modern Electronic Semiconductor Devices

формат pdf
размер 6.81 МБ
добавлен 21 декабря 2011 г.

John Wiley & Sons, Inc., 2002, - 460 pages. The book contains nine chapters in total. The first chapter provides an overview of emerging trends in compound semiconductors and computing technology. Authors have tried to focus the book on the three emerging areas: telecommunications, quantum structures, and challenges and alternatives to CMOS technology. The balance of the book examines these three issues in detail. There are sections throughou...

Helbert J. Handbook of VLSI Microlitghography. Principles, Technology, and Applications

Справочник

формат pdf
размер 6.38 МБ
добавлен 30 ноября 2011 г.

Noyes Publications/William Andrew; 2nd edition, 2001. - 1022 p. This handbook gives readers a close look at the entire technology of printing very high resolution and high density integrated circuit (IC) patterns into thin resist coatings, including optical lithography, electron beam, ion beam, and x-ray lithography. The book's main theme is the special printing process needed to achieve volume high density IC chip production, especially in the...

Levinshtein M., Kostamovaara J., Vainshtein S. Breakdown Phenomena in Semiconductors and Semiconductor Devices

формат pdf
размер 9.14 МБ
добавлен 11 декабря 2011 г.

World Scientific Publishing, 2005, 208 pages. Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdow...

Oktyabrsky S., Ye P.D. (Eds.) Fundamentals of III-V Semiconductor MOSFETs

Статья

формат pdf
размер 12.24 МБ
добавлен 14 января 2012 г.

Сборник статей. Springer, 2010.- 445p. Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFE...

Pearton S.J. Processing of Wide Band Gap Semiconductors

формат pdf
размер 24.06 МБ
добавлен 18 декабря 2011 г.

William Andrew, Noyes Publications, 2000, 571 pages. Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps which give them a huge advantage over the indirect gap SiC. As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high-brightness (15 lumens per watt), very-long-lifetim...

Tang D.D., Lee Y.-J. Magnetic Memory: Fundamentals and Technology

формат pdf
размер 2.78 МБ
добавлен 13 октября 2011 г.

Cambridge University Press, 2010, 196 pages If you are a semiconductor engineer or a magnetics physicist developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and how they are related to memory performance, characterization methods of magnetic films, and tunneling magnetoresistance effect devi...

Tung C.-H., Sheng G.T.T., Lu C.-Y. ULSI Semiconductor Technology Atlas

формат pdf
размер 26.26 МБ
добавлен 25 сентября 2011 г.

Wiley, 2003, 666 pages More than 1,100 TEM images illustrate the science of ULSI The natural outgrowth of VLSI (Very Large Scale Integration), Ultra Large Scale Integration (ULSI) refers to semiconductor chips with more than 10 million devices per chip. Written by three renowned pioneers in their field, ULSI Semiconductor Technology Atlas uses examples and TEM (Transmission Electron Microscopy) micrographs to explain and illustrate ULSI proce...

Vashchenko V.A., Sinkevitch V.F. Physical Limitations of Semiconductor Devices

формат pdf
размер 8.22 МБ
добавлен 22 сентября 2011 г.

Springer Science+Business Media, 2008, 330 pages Providing an important link between the theoretical knowledge in the field of non-linier physics and practical application problems in microelectronics, the purpose of the book is popularization of the physical approach for reliability assurance. Another unique aspect of the book is the coverage given to the role of local structural defects, their mathematical description, and their impact on the...