World Scientific Publishing, 2005. - 262 p. - The increasing
complexity of problems in semiconductor electronics and
optoelectronics has exposed the insufficient potential of the
technological doping processes currently used. One of the most
promising techniques, which this book explores, is radiation
doping: the intentional, directional modification of the properties
of semiconductors under the action of various types of radiation.
The authors consider the basic principles of proton interactions
with single crystal semiconductors on the basis of both theory as
well as practical results. All types of proton modifications of the
materials known presently are analyzed in detail and exciting new
fields of research in this direction are discussed.
Kozlovski V., Abrosimova V. Radiation Defect Engineering
- формат pdf
- размер 13.43 МБ
- добавлен 04 февраля 2012 г.
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