Contents:
David Vye, Microwave Joual Editor. Despite another economically difficult year, there were a few bright spots in the microwave electronics industry.
James Frame, Jeritt Kent and Ian Lawee, Analog Devices Inc. Inclusion of communications capability within a variety of monitoring and metering equipment in upgrading electrical power grids.
WIN Semiconductors Corp. Development of a 0.1 µm GaAs PHEMT technology targeting millimeter-wave power products at E- and V-band.
Craig Wall, Agilent Technologies Inc. Introduction to a technique used to combine the calibrated electrical measurement capabilities of a vector network analyzer with the nanoscale spatial resolution of an atomic force microscope.
K. Weer and S. Theeuwen, NXP Semiconductors. Development of a light source technology using small, electrode-less quartz light bulbs driven by an RF amplifier.
Young Yun, Korea Maritime University. Development of a miniaturized and broadband impedance transformer using a coplanar waveguide employing a periodically arrayed grounded-strip structure on silicon substrate.
A complete listing of 2010 Microwave Joual articles organized by subject and indexed alphabetically by author.
CST of America. Use of electromagnetic simulation software in synthesizing constituent components and their interaction within a complex system.
Schmid & Partner Engineering AG (SPEAG). Introduction to a new software platform providing a solution for the design of multi-channel phased array coils and parallel MRI protocol optimization.
AnaPico AG. Introduction to a fully automated signal analyzer covering a frequency range from 10 MHz to 6.2 GHz.
Freescale Semiconductor. LDMOS power transistor for operation from 1.8 to 600 MHz with a full-rated output power of 1250 W CW after withstanding a VSWR of 65:1.
NXP Semiconductors. Development of a 50 V ISM power LDMOS family process featuring high power density delivering 20 to 1200 W.
David Vye, Microwave Joual Editor. Despite another economically difficult year, there were a few bright spots in the microwave electronics industry.
James Frame, Jeritt Kent and Ian Lawee, Analog Devices Inc. Inclusion of communications capability within a variety of monitoring and metering equipment in upgrading electrical power grids.
WIN Semiconductors Corp. Development of a 0.1 µm GaAs PHEMT technology targeting millimeter-wave power products at E- and V-band.
Craig Wall, Agilent Technologies Inc. Introduction to a technique used to combine the calibrated electrical measurement capabilities of a vector network analyzer with the nanoscale spatial resolution of an atomic force microscope.
K. Weer and S. Theeuwen, NXP Semiconductors. Development of a light source technology using small, electrode-less quartz light bulbs driven by an RF amplifier.
Young Yun, Korea Maritime University. Development of a miniaturized and broadband impedance transformer using a coplanar waveguide employing a periodically arrayed grounded-strip structure on silicon substrate.
A complete listing of 2010 Microwave Joual articles organized by subject and indexed alphabetically by author.
CST of America. Use of electromagnetic simulation software in synthesizing constituent components and their interaction within a complex system.
Schmid & Partner Engineering AG (SPEAG). Introduction to a new software platform providing a solution for the design of multi-channel phased array coils and parallel MRI protocol optimization.
AnaPico AG. Introduction to a fully automated signal analyzer covering a frequency range from 10 MHz to 6.2 GHz.
Freescale Semiconductor. LDMOS power transistor for operation from 1.8 to 600 MHz with a full-rated output power of 1250 W CW after withstanding a VSWR of 65:1.
NXP Semiconductors. Development of a 50 V ISM power LDMOS family process featuring high power density delivering 20 to 1200 W.