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Pearton S.J. Processing of Wide Band Gap Semiconductors
William Andrew, Noyes Publications, 2000, 571 pages.

Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps which give them a huge advantage over the indirect gap SiC. As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high-brightness (15 lumens per watt), very-long-lifetime white LEDs are under development with the potential to replace incandescent bulbs in many situations.
WIDE BANDGAP SEMICONDUCTORS provides readers with a broad overview of this rapidly expanding technology, bringing them up to speed on new discoveries and commercial applications. It provides specific technical explanations of key processes such as laser diodes, LEDs and very high temperature electronic controls on engines, focusing on doping, etching, oxidation passivation, growth techniques, and more.
The volume also explores the potential use of these semiconductors in HDTV, power conditioning devices, and high power microwave applications. The contributors are all experts in the fields of growth, processing, and characterization of these semiconductors, including II-VI compounds, processing techniques for SiC, GaN and diamond, and materials analysis of all wide gap semiconductors.
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