
Yokota et al. reported that the thermal conductivity of
silicon nitride increased as the impurities in the grains
decreased by using a p-silicon nitride raw powder of
high-purity [6]. Yokota also reported that since oxygen
was the major impurity in the grains, the high thermal
conductivity was thus achieved by reducing the oxygen
content of the grains.
Therefore, it can
be
said that the liquid phase (J
phase) associated with high Yb,OJSiO, ratio, in
otherwords ytterbium-rich silicates during the grain
growth in comparison to K phase of other rare-earth
oxides should have lower oxygen solubility in the silicon
nitride grains. Additionally the high growth rate of
silicon nitride-Yb,O, enhances the removal of oxygen
from the grains.
Hirosaki
et
al. reported that significant
improvement of thermal conductivity
is
due to decrease
in two grain junctions accompanying grain growth [l].
In
this experiment, since the thermal conductivity of silicon
nitride-Ln,O, increased with the area fraction of large
grains, the high thermal conductivity
is
also here
attributed to
a
decrease in two grain junctions as grain
growth.
Therefore, thermal conductivity of silicon nitride-
Ln,O,
depends
on
the type of additive, the highest
thermal conductivity of 121 Wm 'K' being achieved by
the silicon nitride-Yb,O,.
(2)
Compatiblity between high thermal
conductivity
and
high mechanical strength
600
cj
s
3
500
F:
c
m
3
400
i?
a
3
300
L
Powder(b)
'.
,
'0
,
80
85
90 95
100
105
Thermal
conductivity/Wm
K
-1 -1
Fig.5 Relation between thermal conductivity and flexural
strength.
Fig.5 shows that relation between thermal
conductivity and flexural strength. The sintered materials
grown from powder (a) have both thermal conductivity
of approximately
100
Wm%' and flexural strength of
approximately
550
MPa in striking contrast to those
grown from powder (b). Fracture toughness
of
the
sintered materials grown from the powder (a) was
6
MPa m1l2
It is appears from this data that it is difficult to
obtain high thermal conductivity and good mechanical
properties with
a
bimodal microstructure. This would be
because large elongated grains are considered to be the
origin of cracks, when flexural testing is done.
Therefore, it can
be
said that the achievement of
both high thermal conductivity and sufficient mechanical
properties by using the powder (a) due to the
homogeneous microstructure of the sintered material
achieved thereby
.
Emoto et al. investigated that the grain growth
behavior of fine-grained p-silicon nitride with varying
amounts
of
nuclei, and they concluded that the grain
growth driving force depended
on
the amount of nuclei
in the silicon nitride raw powder
[7].
In
this experiment as well, the difference of the
microstructure of the sintered materials between powder
(a) and (b)
is
considered to
be
the amount of nuclei in the
silicon nitride raw powders.
SUMMARY
We have newly developed a silicon nitride
substrate with a thermal conductivity of 100 Wm-'K'.
A
high thermal conductivity with sufficient mechanical
properties was achieved by processing the high purity
raw powder of p-silicon nitride with ytterbium oxide
as
an additive and developing the homogeneous
microstructure of a sintered material. This material
densified to over
99
%
of the theoretical density at the
sintering temperature of
1800
"C
for
8
h
under a
nitrogen pressure
of
0.9
MPa.
In
this material, the
flexural strength was between
550
and 600 MPa, and
fracture toughness was 6 MPa-m"'. It
is
thus considered
that this material could
be
an attractive substrate for the
power modules.
REFERENCES
(1) N.Hirosaki, Y.Okamoto, M.Ando, EMunakata,
and
Y.Akiume, Thermal Conductivity of Gas-Pressure-
Sintered Silicon Nitride, J.AmCeruni.Soc., 79
[ll]
(1996) 2878-82
(2) K.Hirao, K.Watari, M.E.Brito, M.Toriyama, and
S.Kanzaki, High Thermal Conductivity in Silicon
Nitride with Anisotropic Microstructure,
.JAnr.
Ceruni.Soc.,79
[9]
(1996) 2485-SS
(3) K.Watari, K.Hirao, M.E.Brito, M.Toriyama, and
S.Kanzaki, Hot Isostatic Pressing to Increasing
Thermal Conductivity of Si,N, Ceramics,
J.Muter.Res.,
14 [4] (1999) 1538-1541
(4) L.J.Gaukler, H.Hohnke, and T.Y.Tien, The System
Si,N, J.AmCerum.Soc.,63
[35]
(1973)
(5)
A.V.Virkar, T.B.Jackson, and R.A.Culter,
Thermodynamic and Kinetic Effects and Oxygen
Removal
on
the Thermal Conductivity
of
Alumminum Nitride, J.AnrCeruni.Soc., 72
[
111
(1989) 2031-42
(6) H.Yokota and M.Ibukiyama, to be published.
(7) H.Emoto and M.Mitomo, Control and
503