Martienssen W., Warlimont H. (Eds.). Handbook of Condensed Matter and Materials Data

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832 Part 4 Functional Materials

Table 4.4-4 Cubic, point group m3m (O

) materials, cont.

General Static dielectric Dissipation Elastic Elastic Elastooptic

constant factor stiffness tensor compliance tensor tensor

Material 



g/cm



tan δ

Mohs hardness c

κ (W/mK) ( f (Hz)) c

(10

Pa)



−12

−1



− p

Sodium chloride, NaCl 2.17 5.9 [4.26] 49.1(5) 22.9(5) 0.128

(rock salt, halite) 2 12.8(1) 78.3(8) 0.171

1.15 [4.21] 12.8(1) −4.8(1) −0.01

[4.7] [4.7] −0.04 (589–633 nm)

[4.52,53,76]

Sodium ﬂuoride, NaF 2.558 6 [4.21] 97.0(4) 11.50(6) 0.03

– 28.1(3) 35.6(4) 0.14

3.746 [4.21] 24.2(10) −2.30(7) −

[4.7] [4.7] −0.10 (589–633 nm)

[4.76–78]

Strontium ﬂuoride, SrF

4.24 7.69 [4.21] 124(1) 9.86(4) 0.080

– 31.8(3) 31.5(3) 0.269

1.42 [4.21] 44(1) −2.57(5) 0.018

[4.7] [4.7] −0.189 [4.23, 24]

Strontium titanate, 5.12 300 [4.48] 0.02 316(2) 3.75(3) |0.15|

SrTiO

6–6.5 (10 GHz) 123(1) 8.15(8) |0.095|

12 [4.79] [4.48] 102(1) −0.92(1) |0.072|

[4.7] [4.7] −

[4.80]

Yttrium aluminium 4.56 333(3) 3.61(4) −0.029

garnet, Y

8–8.5 114(1) 8.74(4) 0.0091

(YAG) 13.4 [4.81] 111(3) −0.90(2) −0.0615

[4.7] [4.7] −0.038 [4.82]

The refractive index is given in bold type to distinguish it from the constants A, B, etc. in the dispersion relation.

abcdefghij

Dispersion relations (λ (µm), T =20

◦

C):

= 1.33973 +

0.81070λ

−0.10065

0.19652λ

−29.87

4.52469λ

−53.82

;

= 1.33973+

0.69913λ

−0.09374

0.11994λ

−21.18

4.35181λ

−38.46

;

= 2.37553 +

0.0336440λ

−0.028

−

0.0887524

(λ

−0.028)

−2.40455× 10

−6

+2.21390× 10

−9

;

= A +

Bλ

−C

Dλ

−E

Fλ

−G

;

= 1.39408 +

0.79221λ

−0.0213

0.01981λ

−0.0299

0.15587λ

−0.0350

0.17673λ

−3674

2.0621λ

−7695

Part 4 4.4

Dielectrics and Electrooptics 4.4 Tables of Numerical Data for Dielectrics and Electrooptics 833

Table 4.4-4 Cubic, point group m3m (O

) materials, cont.

General Refractive index Nonlinear dielectric

optical properties susceptibility

Transparency range (µm) n D χ

(3)

1111

dn/dT



−5

−1



A E χ

(3)

1122

B F χ

(3)

1133

C G



−22



0.2–16 [4.40] 1.5313 6.7 [4.70]

−3.42 (0.458 µm) For dispersion relation, 2.78 [4.71]

−3.54 (0.633 µm) see

[4.65] at 0.6943 and 0.7456 µm

−3.63 (3.39 µm) [4.41] −

(3)

1111

= 9.5 ±2,

(3)

1133

= 4.0 ±1.2 [4.66]

0.135–11.2 [4.83] 1.32 3.18248 1.4 [4.70]

−1.19 (0.458 µm) 1.41572 1646 –

−1.32 (0.633 µm) 0.32785 0 –

−1.25 (3.39 µm) [4.41] 0.0137 0 [4.65]

0.13–11 1.59 (0.150 µm) 1.37 (9.00 µm) 0.82±0.2

−0.9(0.150 µm) 1.50 (0.200 µm) 1.33 (11.0 µm) –

−1.2(0.590 µm) 1.47 (0.266 µm) 1.25 (14.0 µm) 0.56 ±0.8

−0.4(14.0 µm) 1.4380 (0.590 µm) dispersion (0.575; 0.613 µm)

[4.43] 1.433 (1.05 µm) relations, see [4.42]

1.404 (6.00 µm) [4.43]

0.41–5.1 [4.84,85] 2.3104 1.170065 ≈ 2000

− 1 0.08720717 –

3.042143 30.83326 ≈ 1000

0.02178287 1101.3146 [4.86]

(0.6943 and 0.7456 µm) [4.66]

0.21–5.3 [4.87] 1.8422 (0.5 µm) For dispersion

0.905 [4.87] 1.8258 (0.7 µm) relation, see

1.8186 (0.9 µm) [4.88]

1.8152 (1.05 µm)

1.8149 (1.064 µm)

= 1.26486 +

0.30523λ

−0.0100

0.41620λ

−0.0172

0.18870λ

−0.0262

2.6200λ

−4959

;

= 1.47285 +

0.16512λ

−0.0166

0.41222λ

−0.0306

0.44163λ

−0.0350

0.16076λ

−0.0480

0.33571λ

−4822

1.92474λ

−9612

;

= 1.00055 +

0.19800λ

−0.00250

0.48398λ

−0.0100

0.38696λ

−0.0164

0.25998λ

−0.0250

0.08796λ

−1640

3.17064λ

−3719

0.30038λ

−14482

;

= 1.33973 +

0.7097λ

−0.09597

0.1788λ

−26.03

3.8796λ

−45.60

;

= 3.2968230 −0.0166197λ

+0.0126503λ

−2

+0.0069986λ

−4

−0.0013968λ

−6

+0.0001088λ

−8

Part 4 4.4

834 Part 4 Functional Materials

Table 4.4-5 Cubic, point group 43m (T

) materials

General Static dielectric Dissipation Elastic Piezoelectric Elastooptic

constant factor stiffness tensor strain tensor tensor

Material 



g/cm



tan δ

Mohs hardness ε

(10

−12

C/N) p

κ (W/mK) ( f (Hz)) c

(10

Pa) p

− p

Cadmium telluride, 5.855 9.65 (−196

◦

C) 53.5(2) 1.68(8) −0.152

CdTe (Irtran-6) 3 [4.89] 20.2(2) (−196

◦

C) −0.017

6.28 [4.79] 11.00 (23

◦

C) 36.9(3) [4.89] −0.057

[4.90] [4.7] −0.135 (10 600 nm)

[4.91]

Copper bromide, 7.9(8) (22

◦

C) [4.92] 43.5 16(1) 0.072

CuBr 6.6 (−193

◦

C) [4.93] 14.7 [4.94] 0.195

34.9 −0.083

[4.95] −0.123 [4.96]

Copper chloride, 4.136 8.3(5) 45.4 27.2(5) 0.120

CuCl (nantokite) − 9.2(5) [4.97,98] 13.6

[4.94] 0.250

− 36.3 −0.082

[4.99] −0.130 [4.96]

Copper iodide, CuI 5.60 − 45.1 7(1) 3.032

− 6.5 (−269

◦

C) [4.93] 18.2

[4.94] 0.151

− 30.7 −0.068

[4.93] −0.119 [4.96]

Gallium antimonide, 5.614 15 [4.100] 88.4(9) −2.9 [4.100]

GaSb 4.5 15.7

[4.101] 43.4(9)

32 [4.101] 40.3(8) [4.7]

Gallium arsenide, 5.3169 12.95(10) [4.102] 0.001 118(1) −2.7 [4.100] −0.16

GaAs 4.5 13.08 [4.90] (2.5–10 GHz) 59.4(2) −0.13

46.05 [4.16] [4.103] 53.5(5) [4.7] −0.05

−0.03 (1150 nm)

[4.96,104]

Gallium phosphide, 4.138 11.1

[4.105] 141(3) −0.151

GaP 5 71.2(21) −0.082

110 [4.101] 62.4(12) [4.7] −0.074

−0.069 [4.82]

Part 4 4.4

Dielectrics and Electrooptics 4.4 Tables of Numerical Data for Dielectrics and Electrooptics 835

Table 4.4-5 Cubic, point group 43m (T

) materials, cont.

Electrooptic General Refractive Nonlinear dielectric susceptibility

tensor optical properties index Second order Third order

Transparency range (µm) n d

(3)

1111

(10

−12

m/V) dn/ dT



−5

−1



A (10

−12

m/V) χ

(3)

1122

B χ

(3)

1133

C (10

−22

)

6.8 (10.6 µm) 0.85–29.9 [4.85] 2.693 (14 µm) 170 ±60 (10.6 µm)

[4.106] For temperature- 1 60 ±24 (28 µm)

dependent dispersion 6.1977889 [4.107–109]

relations, see [4.110] 0.100533

3.2243821

5193.55 [4.111]

−2.5(5) [4.112]

0.50–20 [4.113] 2.3365 (0.4358 µm) −6.5±1.3(1.064 µm) [4.114]

− 2.152 (0.532 µm) −5.0 ±1.5(10.6 µm) [4.113]

2.045 (1.064 µm)

2.025 (10.6 µm)

[4.92,113,114]

−4.97(50) [4.115] 0.45–15 [4.113] 1.9216 −5.7±1.1(1.064 µm) [4.114]

− 3.580 −4.15±1.2(10.6 µm) [4.113]

0.03162

0.1642

0.09288

0 [4.116]

18 [4.117,118]

0.50–20 [4.113] 2.5621 (0.4358 µm) −4.7±1.0(1.064 µm) [4.114]

− 2.378 (0.532 µm) −5.0±1.5(10.6 µm) [4.113]

2.245 (1.064 µm)

[4.113,114]

1.8–20 [4.22,85] 3.820 (1.8 µm) +628 ±63 (10.6 µm)

− 3.898 (3.0 µm) [4.119,120]

3.824 (5.0 µm)

3.843 (10 µm) [4.121]

1.43(7) (1.15 µm) 0.900–17.3 [4.122] 3.5072 d

= 170 (1.064 µm) 6700 [4.64]

1.24(4) (3.39 µm) 25 (1.15 µm) 3.5 [4.13, 14,123,124] 1400 [4.125]

1.51(5) (10.6 µm) 20 (3.39 µm) 7.497 d

= 83 (10.6 µm) 1700 [4.64]

[4.126] 20 (10.6 µm) [4.127] 0.167 [4.12,14,128] (all at 10.6 µm)

1.935

1382 [4.129]

−0.76(3) [4.130] 0.54–10.5 3.1057 100 [4.105, 131]

20 (0.546 µm) For dispersion relation, 58 (10.6 µm) [4.131]

16 (0.633 µm) see [4.132]

[4.131]

Part 4 4.4

836 Part 4 Functional Materials

Table 4.4-5 Cubic, point group 43m (T

) materials, cont.

General Static dielectric Dissipation Elastic Piezoelectric Elastooptic

constant factor stiffness tensor strain tensor tensor

Material 



g/cm



tan δ

Mohs hardness ε

(10

−12

C/N) p

κ (W/mK) ( f (Hz)) c

(10

Pa) p

− p

Indium antimonide, 5.78 16.8

[4.101] 66.2(7) −2.35 [4.100] 0.46

InSb – 17 [4.100] 30.2(3) 0.58

18 [4.101] 35.9(22) [4.7] 0.064 (10.6 µm)

−

[4.133,134]

Indium arsenide, InAs 5.70 15.5

[4.101] 84.4(17) −1.14 [4.100]

3.8 14.5 [4.100] 39.6(1)

27 [4.101] 46.4(19) [4.7]

Indium phosphide, InP 4.78 12.56(20)

See [4.135] 101.1

– 45.6

68 [4.101] 56.1 [4.136]

Zinc selenide, ZnSe 5.26 9.12 86.4(39) 1.1(1) [4.89] |0.100|

3–4 9.12 [4.89] 40.2(18) |0.065|

19 [4.137] 51.5(34) [4.7] |0.065| (633 nm)

[4.138]

−0.10 (10 600 nm)

[4.139]

Zinc telluride, ZnTe 6.34 10.10 71.5(6) 0.91(5) [4.89] −0.144

6 10.10 [4.89] 31.1(3) −0.094

18 [4.140] 40.8(1) [4.7] −0.046 [4.141]

−0.040 [4.142]

The elastic stiffness was measured at constant electric ﬁeld





This value for ε

is neither at constant stress nor at constant strain.

cde

Dispersion relations (λ (µm), T = 20

◦

C):

= A +

Bλ

−C

Dλ

−E

= 1 +

1.390λ

−0.0296

4.131λ

−0.05476

2.570λ

−0.1190

2.056λ

−757.35

Part 4 4.4

Dielectrics and Electrooptics 4.4 Tables of Numerical Data for Dielectrics and Electrooptics 837

Table 4.4-5 Cubic, point group 43m (T

) materials, cont.

Electrooptic General Refractive Nonlinear dielectric susceptibility

tensor optical properties index Second order Third order

Transparency range (µm) n d

(3)

1111

(10

−12

m/V) dn/ dT



−5

−1



A (10

−12

m/V) χ

(3)

1122

− B χ

(3)

1133

C (10

−22

)

8–30 [4.85] 3.904 (14 µm) 660 [4.123] See [4.143, 144]

− 3.745 (28 µm) [4.107] 2280 ±270 (10.6 µm)

[4.145]

580 (28 µm) [4.107]

3.9–20 [4.85] 3.49 (10.6 µm) 346 (1.058 µm) [4.123] ≈ 25 000

50 (4 µm) 11.1 249 (10.6 µm) (10.6 and 9.5 µm) [4.64]

40 (6 µm) 0.71 [4.119,120]

30 (10 µm) [4.127] 6.5076

2.75

2084.8 [4.146]

1.45 (1.06 µm) 0.98–20 [4.147] 3.44 136 (1.058 µm) [4.148]

[4.149] 8.3 (5 µm) 7.255 105 ±11 (10.6 µm)

8.2 (10.6 µm) 2.316 [4.145]

7.7 (20 µm) [4.150] 0.39225

2.765

1084.7 [4.151,152]

1.8 [4.153,154] 0.47–19 [4.122] 2.48 +103 [4.122] 1.05×10

(0.4606 µm)

2.2 (10.6 µm) [4.155] − For dispersion relation, +80 (10.6 µm) 2650 (0.532 µm)

see [4.41]

[4.109,156] 1680 (1.064 µm)

(all for |χ

(3)

|) [4.157]

4.27 (0.616 µm) 0.59–25 [4.14] 2.69 (10.6 µm) 3.47 [4.122]

[4.153,154] − 4.27 +90 (10.6 µm)

3.01 [4.108, 109]

0.142

0 [4.158]

= 1+

4.2980149λ

−0.03688810

0.62776557λ

−0.14347626

2.8955633λ

−2208.4920

Part 4 4.4

838 Part 4 Functional Materials

Table 4.4-6 Cubic, point group 23 (T ) materials

General Static dielectric Dissipation Elastic Piezoelectric Elastooptic

constant factor stiffness tensor strain tensor tensor

Material 



g/cm



tan δ

Mohs hardness ε

(10

−12

C/N) p

κ (W/mK) ( f (Hz)) c

(10

Pa) p

− p

Bismuth germanium oxide, 9.239 38.0(4) 0.0035 126.0 37.58(4) 0.12

GeO

(BGO) 5 [4.159] [4.160] [4.161] 26.9 [4.162] 0.10

− 40 [4.161] 34.2 [4.163] 0.09(1)

0.01 [4.164–169]

Bismuth silicon oxide, 9.2 42(1) [4.170] 0.0004 129(2) 0.16

SiO

(BSO, sillenite) 5 [4.159] 64(2) [4.171] (> 1MHz) 24.7(2) 0.13

− [4.171] 29.4(12) [4.7] 0.12

0.015 [4.172,173]

Sodium chlorate, NaClO

2.488 4.8 49.6(5) −1.74 [4.174] 0.162

− 5.85 [4.175] 11.6(2) 0.24

− 14.7(6) [4.7]

−0.0198

−0.078

[4.176]

Table 4.4-7 Hexagonal, point group 6m2(D

) materials

General Static dielectric Elastic stiffness Elastooptic

tensor tensor tensor

Material 



g/cm



Mohs hardness ε

κ ⊥ c ε

κ  c ε

(W/mK) c

(10

Pa) p

Gallium selenide, GaSe 5.0 7.45

106.4(37) |p

/ p

| < 0.05

2 7.1

35.8(15) [4.177]

9.0 (⊥ c) 9.80

10.2(5)

8.25 ( c) 8.0(3) 30.0(25)

[4.178] [4.179] 12.1(4) [4.7]

Gallium sulﬁde, GaS 3.86 127(19)

2 42(11)

− 12.0(73)

− 35.7(45)

14.3(81) [4.7]

From IR measurements. “ε

”isε at optical frequencies.

Part 4 4.4

Dielectrics and Electrooptics 4.4 Tables of Numerical Data for Dielectrics and Electrooptics 839

Table 4.4-6 Cubic, point group 23 (T ) materials, cont.

Electrooptic General Refractive Nonlinear dielectric

tensor optical properties index susceptibility

Transparency range (µm) n d

(10

−12

m/V) dn/dT



−5

−1



A (10

−12

m/V)

4.1(1) 0.385–7 [4.159, 180] 2.55 (0.633 µm) [4.159]

−

4.25–5.0 0.390–6 [4.159,180] 2.54 (0.633 µm) [4.159]

[4.181–183] −

0.36 (0.4 µm) 1.512 (0.6943 µm) 0.43 (0.6943 µm)

0.39 (0.59 µm) For dispersion relation, [4.184]

[4.185] see [4.186]

Dispersion relation (λ (µm), T =20

◦

C):

= A +

Bλ

−C

Dλ

−E

Fλ

−G

Table 4.4-7 Hexagonal, point group 6m2(D

) materials, cont.

Electrooptic General Refractive index Nonlinear dielectric

tensor optical properties susceptibility

Transparency range (µm) n

A A d

B B (10

−12

m/V)

C C

(10

−12

m/V) D D

at λ =633 nm E E

F F

22 (n

) 0.62–20 [4.187] 2.9082 2.5676 d

= 54 pm/V(10.6 µm)

[4.188,189] 7.443 5.76 [4.190–192]

0.4050 0.3879

0.0186 0.2288

0.0061 0.1223

3.1485 1.8550

2194 [4.193]

1780 [4.193]

0.420– d

= 84 pm/V(0.6943 µm)

[4.194]

Dispersion relations (λ (mm), T =20

◦

C):

= A +

Eλ

−F

Part 4 4.4

840 Part 4 Functional Materials

Table 4.4-8 Hexagonal, point group 6mm (C

) materials

General Static dielectric Elastic stiffness Piezoelectric Elastooptic

tensor tensor tensor tensor

Material 



g/cm



Mohs hardness ε

κ ⊥ c ε

κ  c ε

(W/mK) c

(10

−12

C/N) p

(10

Pa) p

Beryllium oxide, BeO 3.010 6.82

460.6 −0.12(3)

(bromellite) – 7.62

491.6 +0.24(6)

370 [4.195] 147.7 −

− 126.5 −

[4.45] 88.4 [4.196] [4.197]

Cadmium selenide, CdSe 5.67 9.53 74.1 −3.80(11) See [4.198, 199]

3.25 10.20 83.6 7.81(23)

6.2 (⊥ c) 9.70 13.17 −10.1(4)

6.9 ( c) 10.65 45.2 −

[4.200] [4.89] 39.3 [4.89]

[4.201,202]

Cadmium sulﬁde, CdS 4.82 8.67(7) 88.4(47) −5.09(9) −0.142

(greenockite) 3–3.5 9.53(7) 95.2(22) [4.203,204] −0.066

14 (⊥ c) 8.92(7) 15.0(3) +9.71(29) −0.057

16 ( c) 10.20(7) 55.4(39) [4.203,204] −0.041

[4.200] [4.203,204] 48.0(22) −11.91(39) −0.20

[4.7,205] [4.203,204] ≈|0.054|

<0.05 [4.8] [4.82,206]

Gallium nitride, GaN 6.15 9.5(3) 296

– 10.4(3) 267

1300 [4.207]

24.1

− 130

[4.208] 158 [4.209]

α-Silicon carbide, SiC 3.217 ε

= 6.65 502 See [4.210–212]

– [4.213] 565

490 [4.45] 169

− 95

56 [4.214]

Zinc oxide, ZnO 5.605 8.33(8) 207.0 −5.12(6) |0.221|

(zincite) – 8.81(10) 209.5 [4.215, 216] |0.099|

29 [4.45] 8.67(9) 44.8 12.3(2) −0.090

− 11.26(12) 117.7 [4.215, 216] |0.089|

[4.215,216] 106.1 −8.3(3) −0.263

[4.215,216]

[4.215,216] −0.061 [4.90]

<0.2 [4.8]

Part 4 4.4

Dielectrics and Electrooptics 4.4 Tables of Numerical Data for Dielectrics and Electrooptics 841

Table 4.4-8 Hexagonal, point group 6mm (C

) materials, cont.

Electrooptic General Refractive index Nonlinear dielectric

tensor optical properties susceptibility

Transparency range (µm) n

/dT (10

−5

−1

) A A d

/dT (10

−5

−1

) B B d

(10

−12

m/V) C C (10

−12

m/V)

at λ = 633 nm D D

E E

1.33





0.21–7, 15–25 [4.217] 1.7055 1.7204 0.23

[4.218,219] 0.818 [4.220] 1 1 0.32

1.34 [4.220] 1.92274 1.96939 −

0.0062536 0.0073788 [4.156, 221]

1.24209 1.24209

94.344 [4.222]

109.82 [4.222]

1.8





0.75–20 [4.223,224] 2.5375 2.5572 −29 (10.6 µm) [4.109]

4.3





− 4.2243 4.2009 +55 (10.6 µm) [4.109]

[4.225] − 1.768 1.8875 23 ±3(1.054 mm) [4.226]

0.227 0.2171

3.12 3.6461

3380 [4.227]

3629 [4.227]

2.45(8) 0.53–16 [4.122] 2.212 (10.6 µm) 2.225 (10.6 µm) 16 [4.228]

2.75(8) 5.86 (10.6 µm) 5.235 5.239 32 [4.228]

1.7(3) 6.24 (10.6 µm) −0.1819 0.2076 18 [4.228]

(all at 10.6 µm) [4.229] 0.1651 0.1651 −16 (d

,10.6 µm) [4.12, 14]

[4.126] 0 [4.230]

0 [4.230]

−16 (d

,10.6 µm) [4.12, 14]

− − 32 (d

,10.6 µm) [4.12, 14]

0.57±0.11 (r

) 0.37– 2.33 2.35 21

1.91±0.35 (r

) − 3.60 5.35 44

[4.231] − 1.75 5.08 25.5

0.0655 315.4 [4.232]

4.1 0 [4.207]

319 [4.207] −

0.51–4 2.5830 2.6225 5

− 1 1 50 [4.233]

− 5.5515 5.7382 −

0.026406 0.028551

0 [4.213]

− −

−1.4(r

) 0.38–6.0 1.939 1.955 +1.7±0.15

+2.6(r

) − 2.81418 2.80333 −5.6 ±0.15

[4.225,234,235] − 0.87968 0.94470 1.8 ±0.15

−3.1(r

) 0.09254 0.09024 [4.156, 228]

at 396 nm 0.00711 [4.222]

0.00714 [4.222]

[4.236] − −

Part 4 4.4