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© Woodhead Publishing Limited, 2011
to a higher temperature than that of film B. These experimental results can be 
explained as below. First, the a-axis oriented YBCO grain has smaller misfit than 
the c-axis oriented one. Therefore, the existence of a-axis oriented YBCO grains 
may  relieve most  of  the  stress  energy, and  also  make  the  total  system  energy 
descend, which indicates that film A has a lower energy film/substrate interface 
than that in film B. Additionally, in terms of the semi-coherent interface energy 
theory, the  semi-coherent  interface is  divided into  coherent  regions and  defect 
regions.  The  total  interface  energy  is  proportional  to  the  area  fraction  of  the 
interfacial defects.
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 As a consequence, the semi-coherent interface in sample A is 
more stable, leading to the higher superheating level of the YBCO grains on film 
A from a thermodynamic perspective. In brief, the thermal stability and melting 
behaviors rely highly on microstructures and crystallinity of YBCO thin films.
The correlation between thermal stability and in-plane alignments of films
In  order to study the  relationship of the  thermal stability of REBCO films  with 
in-plane alignments, the melting behaviors of YBCO thin films denoted as C and D 
with different in-plane orientations were compared and discussed on the grounds of 
interface energy. The XRD results represent that both 0° and 45° Y123 grains exist 
in film C, which means a weak epitaxial interface. On the other hand, a fourfold 
symmetry  indicates  that  only  0°  oriented  YBCO  grains  exist  in  film  D,  which 
exhibits  a  semi-coherent  interface  at  the  film/substrate  interface.  By  means  of 
HTOM, great differences were found between the melting behaviors of two films. 
First of all, the melting of film C began at a temperature 40 °C lower than the T
p
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Y123, which is 60 °C lower compared with that of film D. Secondly, the amount of 
Y211 appeared in film D is much smaller than that of film C at the very beginning of 
melting. However, a clear growth of Y211 was evident when the heating temperature 
increased, while film C stayed uniform. What is more, a similar enlarging process 
was  observed  in  the  size  of  Y211.  Besides,  the grains  with  0°  (Y211 < 001 > // 
MgO < 100 >)  and  45°  (Y211 < 001 > //  MgO < 110 >)  orientation  appeared 
simultaneously on film C whereas on sample D most Y211 grains had 45° orientation, 
which is known as the preferential growth orientation of Y211 on the MgO substrate.
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From the viewpoint of interface energy, the different melting mode of the two 
films  can  be  elucidated.  For  film  C,  the  weak  epitaxial  interface  implies  the 
existence of additional defects and grain boundaries, which stores a large excess 
energy and constitutes an extra driving force for the melting, leading to a decrease 
of the initial melting temperature. Besides, the nucleation and growth of Y211 
grains were also encouraged due to the high-energy interface. As for film D, a 
semi-coherent  interface  plays  an  important  role  in  understanding  the  melting 
behavior. It is well known that the energy of coherent and semi-coherent interfaces 
is significantly lower than that of non-coherent ones.
44
 Meanwhile, the nucleation 
of melting requires a sufficiently large driving force. These two points result in the 
decomposition of Y123 at a temperature higher than the T
p
. Moreover, the semi-