Справочник по мощным TMOS транзисторам (MOTOROLA)
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4–38
Motorola TMOS Power MOSFET Transistor Device Data
GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation Figure 6. Gate–to–Emitter Voltage versus
Total Charge
C
oes
4000
0
25201550
Q
g
, TOTAL GATE CHARGE (nC)
16
8
0
80200
C, CAPACITANCE (pF)
2400
10
T
J
= 25°C
C
res
C
ies
V
GE
, GATE–TO–EMITTER VOLTAGE (VOLTS)
4
Q
T
Q
1
Q
2
T
J
= 25°C
I
C
= 20 A
1600
6040
V
CE
= 0 V
12
3200
800
V
CC
= 360 V
V
GE
= 15 V
T
J
= 125°C
Figure 7. Total Switching Losses versus
Gate Resistance
R
G
, GATE RESISTANCE (OHMS)
TOTAL SWITCHING ENERGY LOSSES (mJ)
4
2.4
0
50302010 40
Figure 8. Total Switching Losses versus
Junction Temperature
3.2
1.6
V
CC
= 360 V
V
GE
= 15 V
T
J
= 125°C
I
C
= 20 A
T
J
, JUNCTION TEMPERATURE (°C)
TOTAL SWITCHING ENERGY LOSSES (mJ)
3.5
0.5
15075250 100
2.5
1.5
V
CC
= 360 V
V
GE
= 15 V
R
G
= 20 Ω
50 125
Figure 9. Total Switching Losses versus
Collector–to–Emitter Current
I
C
, COLLECTOR–TO–EMITTER CURRENT (AMPS)
TOTAL SWITCHING ENERGY LOSSES (mJ)
3
2
0
201550
2.5
1.5
V
CC
= 360 V
V
GE
= 15 V
R
G
= 20 Ω
T
J
= 125°C
0.5
10
Figure 10. Turn–Off Losses versus
Gate Resistance
R
G
, GATE RESISTANCE (OHMS)
TURN–OFF ENERGY LOSSES (mJ)
1.6
0.8
0.4
50402010 30
I
C
= 20 A
I
C
= 20 A
0.8
1
1.2
15 A
10 A
15 A
10 A
15 A
10 A
4
3
2
1
4–39
Motorola TMOS Power MOSFET Transistor Device Data
I
C
, COLLECTOR–TO–EMITTER CURRENT (A)
i
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
V
GE
= 15 V
R
GE
= 20 Ω
T
J
= 125°C
Figure 11. Turn–Off Losses versus
Junction Temperature
T
J
, JUNCTION TEMPERATURE (°C)
TURN–OFF ENERGY LOSSES (mJ)
2
1
0.5
0
75250 100
Figure 12. Turn–Off Losses versus
Collector–to–Emitter Current
V
CC
= 360 V
V
GE
= 15 V
R
G
= 20 Ω
I
C
, COLLECTOR–TO–EMITTER CURRENT (AMPS)
1.2
0.4
0
20105015
V
CC
= 360 V
V
GE
= 15 V
R
G
= 20 Ω
T
J
= 125°C
Figure 13. Typical Diode Forward Drop versus
Instantaneous Forward Current
V
FM
, FORWARD VOLTAGE DROP (VOLTS)
100
0.1
20.40
10
1
1.2
Figure 14. Reverse Biased Safe
Operating Area
V
CE
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
100
10
0.1
10001
1
50 125 150
I
C
= 20 A
TURN–OFF ENERGY LOSSES (mJ)
T
J
= 125°C
T
J
= 25°C
10010
0.8
1.5
15 A
10 A
0.8 1.6
4–40
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time. Fast switching characteristics result in efficient
operation at high frequencies.
• Industry Standard High Power TO–247 Package with
Isolated Mounting Hole
• High Speed E
off
: 160 J/A typical at 125°C
• High Short Circuit Capability – 10 s minimum
• Robust High Voltage Termination
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector–Emitter Voltage V
CES
1200 Vdc
Collector–Gate Voltage (R
GE
= 1.0 MΩ) V
CGR
1200 Vdc
Gate–Emitter Voltage — Continuous V
GE
±20 Vdc
Collector Current — Continuous @ T
C
= 25°C
— Continuous @ T
C
= 90°C
— Repetitive Pulsed Current (1)
I
C25
I
C90
I
CM
28
20
56
Adc
Apk
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
174
1.39
Watts
W/°C
Operating and Storage Junction Temperature Range T
J
, T
stg
–55 to 150 °C
Short Circuit Withstand Time
(V
CC
= 720 Vdc, V
GE
= 15 Vdc, T
J
= 125°C, R
G
= 20 Ω)
t
sc
10
s
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
R
θJC
R
θJA
0.7
35
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds T
L
260 °C
Mounting Torque, 6–32 or M3 screw
10 lbf in (1.13 N m)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
IGBT IN TO–247
20 A @ 90°C
28 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
CASE 340F–03, Style 4
TO–247AE
Motorola Preferred Device
G
C
E
C
E
G
4–41
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(V
GE
= 0 Vdc, I
C
= 25 µAdc)
Temperature Coefficient (Positive)
BV
CES
1200
—
—
870
—
—
Vdc
mV/°C
Emitter–to–Collector Breakdown Voltage (V
GE
= 0 Vdc, I
EC
= 100 mAdc) BV
ECS
25 — — Vdc
Zero Gate Voltage Collector Current
(V
CE
= 1200 Vdc, V
GE
= 0 Vdc)
(V
CE
= 1200 Vdc, V
GE
= 0 Vdc, T
J
= 125°C)
I
CES
—
—
—
—
100
2500
µAdc
Gate–Body Leakage Current (V
GE
= ± 20 Vdc, V
CE
= 0 Vdc) I
GES
— — 250 nAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(V
GE
= 15 Vdc, I
C
= 10 Adc)
(V
GE
= 15 Vdc, I
C
= 10 Adc, T
J
= 125°C)
(V
GE
= 15 Vdc, I
C
= 20 Adc)
V
CE(on)
—
—
—
3.00
2.36
2.90
3.54
—
4.99
Vdc
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
V
GE(th)
4.0
—
6.0
10
8.0
—
Vdc
mV/°C
Forward Transconductance (V
CE
= 10 Vdc, I
C
= 20 Adc) g
fe
— 12 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V 25 Vd V 0 Vd
C
ies
— 1860 — pF
Output Capacitance
(V
CE
= 25 Vdc, V
GE
= 0 Vdc,
f = 1.0 MHz
)
C
oes
— 122 —
Transfer Capacitance
f
1.0
MHz)
C
res
— 29 —
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time t
d(on)
— 88 — ns
Rise Time
(V
CC
= 720 Vdc, I
C
= 20 Adc,
V 15 Vd L 300 H
t
r
— 103 —
Turn–Off Delay Time
V
GE
= 15 Vdc, L = 300 H
R
G
= 20 Ω
,
T
J
= 25°C
)
t
d(off)
— 190 —
Fall Time
R
G
=
20
Ω
,
T
J
=
25 C)
Energy losses include “tail”
t
f
— 284 —
Turn–Off Switching Loss E
off
— 1.65 3.75 mJ
Turn–On Delay Time t
d(on)
— 83 — ns
Rise Time
(V
CC
= 720 Vdc, I
C
= 20 Adc,
V 15 Vd L 300 H
t
r
— 107 —
Turn–Off Delay Time
V
GE
= 15 Vdc, L = 300 H
R
G
= 2
0
Ω
,
T
J
= 12
5
°
C)
t
d(off)
— 216 —
Fall Time
R
G
=
20
Ω
,
T
J
=
125 C)
Energy losses include “tail”
t
f
— 494 —
Turn–Off Switching Loss E
off
— 3.19 — mJ
Gate Charge
(V 720 Vd I 20 Ad
Q
T
— 62 — nC
(V
CC
= 720 Vdc, I
C
= 20 Adc,
V
GE
= 15 Vdc
)
Q
1
— 21 —
V
GE
15
Vdc)
Q
2
— 25 —
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25″ from package to emitter bond pad)
L
E
— 13 —
nH
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
4–42
Motorola TMOS Power MOSFET Transistor Device Data
Figure 1. Output Characteristics, T
J
= 25°C Figure 2. Output Characteristics, T
J
= 125°C
Figure 3. Transfer Characteristics Figure 4. Collector–to–Emitter Saturation
Voltage versus Junction Temperature
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 5. Capacitance Variation Figure 6. Gate–to–Emitter Voltage versus
Total Charge
GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
C
oes
10000
10
25201550
C, CAPACITANCE (pF)
10
T
J
= 25°C
C
res
C
ies
100
1000
V
CE
= 0 V
V
GE
= 20 V
T
J
= 25°C
V
CE
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (AMPS)
12.5 V
17.5 V
15 V
10 V
30
20
0
8402 6
40
10
50
60
V
GE
= 20 V
T
J
= 125°C
V
CE
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (AMPS)
12.5 V
17.5 V
15 V
10 V
30
20
0
8402 6
40
10
50
60
V
CE
= 10 V
250 µs PULSE WIDTH
T
J
= 125°C
V
GE
, GATE–TO–EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (AMPS)
20
0
1586510
25°C
V
GE
= 15 V
250 µs PULSE WIDTH
T
J
, JUNCTION TEMPERATURE (°C)
1
150500–50 100
V
CE
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
I
C
= 20 A
40
15 A
12
10 A
2
3
460
14971113
Q
g
, TOTAL GATE CHARGE (nC)
16
8
0
70200
V
GE
, GATE–TO–EMITTER VOLTAGE (VOLTS)
4
Q
T
Q
1
Q
2
T
J
= 25°C
I
C
= 20 A
6040
12
14
6
2
10
6515 553510 503054525
4–43
Motorola TMOS Power MOSFET Transistor Device Data
I
C
, COLLECTOR–TO–EMITTER CURRENT (AMPS)
TOTAL SWITCHING ENERGY LOSSES (mJ)
4
20181410
5
3
V
CC
= 720 V
V
GE
= 15 V
R
G
= 20 Ω
T
J
= 125°C
1
16
2
12
Figure 7. Total Switching Losses versus
Gate Resistance
Figure 8. Total Switching Losses versus
Case Temperature
Figure 9. Turn–Off Losses versus
Collector–to–Emitter Current
Figure 10. Maximum Forward Drop versus
Instantaneous Forward Current
Figure 11. Reverse Biased
Safe Operating Area
I
C
, COLLECTOR–TO–EMITTER CURRENT (A)
V
GE
= 15 V
R
GE
= 20 Ω
T
J
= 125°C
V
CE
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
100
10
0.1
10001
1
10010
R
G
, GATE RESISTANCE (OHMS)
TOTAL SWITCHING ENERGY LOSSES (mJ)
4
2
50302010 40
3
V
CC
= 720 V
V
GE
= 15 V
T
J
= 25°C
I
C
= 25 A
15 A
10 A
6
5
1
0
352515 45
T
C
, CASE TEMPERATURE (°C)
TOTAL SWITCHING ENERGY LOSSES (mJ)
1507525
0
100
4
V
CC
= 720 V
V
GE
= 15 V
R
G
= 20 Ω
50 125
I
C
= 20 A
15 A
10 A
5
3
1
2
T
J
= 25°C
V
FM
, FORWARD VOLTAGE DROP (VOLTS)
I , INSTANTANEOUS FORWARD CURRENT (AMPS)
30
0
43102
40
20
10
T
J
= 125°C
F
5
4–44
Motorola TMOS Power MOSFET Transistor Device Data
Figure 12. Thermal Response
t, TIME (s)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1.0
0.1
0.01
1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 1.0E+00 1.0E+01
R
θJC
(t) = r(t) R
θJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
– T
C
= P
(pk)
R
θJC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.02
D = 0.5
0.05
0.01
SINGLE PULSE
0.1
0.2
4–45
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operation at high frequencies.
• Industry Standard High Power TO–247 Package with
Isolated Mounting Hole
• High Speed E
off
: 60 J per Amp typical at 125°C
• High Short Circuit Capability – 10 s minimum
• Robust High Voltage Termination
• Robust RBSOA
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector–Emitter Voltage V
CES
600 Vdc
Collector–Gate Voltage (R
GE
= 1.0 MΩ) V
CGR
600 Vdc
Gate–Emitter Voltage — Continuous V
GE
±20 Vdc
Collector Current — Continuous @ T
C
= 25°C
— Continuous @ T
C
= 90°C
— Repetitive Pulsed Current (1)
I
C25
I
C90
I
CM
50
30
100
Adc
Apk
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
202
1.61
Watts
W/°C
Operating and Storage Junction Temperature Range T
J
, T
stg
–55 to 150 °C
Short Circuit Withstand Time
(V
CC
= 360 Vdc, V
GE
= 15 Vdc, T
J
= 25°C, R
G
= 20 Ω)
t
sc
10
s
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
R
θJC
R
θJA
0.62
45
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds T
L
260 °C
Mounting Torque, 6–32 or M3 screw
10 lbf in (1.13 N m)
(1) Pulse width is limited by maximum junction temperature.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
IGBT IN TO–247
30 A @ 90°C
50 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
CASE 340F–03, Style 4
TO–247AE
Motorola Preferred Device
G
C
E
C
E
G
4–46
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(V
GE
= 0 Vdc, I
C
= 250 µAdc)
Temperature Coefficient (Positive)
BV
CES
600
—
—
870
—
—
Vdc
mV/°C
Emitter–to–Collector Breakdown Voltage (V
GE
= 0 Vdc, I
EC
= 100 mAdc) BV
ECS
25 — — Vdc
Zero Gate Voltage Collector Current
(V
CE
= 600 Vdc, V
GE
= 0 Vdc)
(V
CE
= 600 Vdc, V
GE
= 0 Vdc, T
J
= 125°C)
I
CES
—
—
—
—
100
2500
µAdc
Gate–Body Leakage Current (V
GE
= ± 20 Vdc, V
CE
= 0 Vdc) I
GES
— — 250 nAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(V
GE
= 15 Vdc, I
C
= 15 Adc)
(V
GE
= 15 Vdc, I
C
= 15 Adc, T
J
= 125°C)
(V
GE
= 15 Vdc, I
C
= 30 Adc)
V
CE(on)
—
—
—
2.20
2.10
2.60
2.90
—
3.45
Vdc
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1 mAdc)
Threshold Temperature Coefficient (Negative)
V
GE(th)
4.0
—
6.0
10
8.0
—
Vdc
mV/°C
Forward Transconductance (V
CE
= 10 Vdc, I
C
= 30 Adc) g
fe
— 15 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V 25 Vd V 0 Vd
C
ies
— 4280 — pF
Output Capacitance
(V
CE
= 25 Vdc, V
GE
= 0 Vdc,
f = 1.0 MHz
)
C
oes
— 275 —
Transfer Capacitance
f
1.0
MHz)
C
res
— 19 —
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time t
d(on)
— 76 — ns
Rise Time
(V
CC
= 360 Vdc, I
C
= 30 Adc,
V 15 Vd L 300 H
t
r
— 80 —
Turn–Off Delay Time
V
GE
= 15 Vdc, L = 300 H
R
G
= 20 Ω
,
T
J
= 25°C
)
t
d(off)
— 348 —
Fall Time
R
G
=
20
Ω
,
T
J
=
25 C)
Energy losses include “tail”
t
f
— 188 —
Turn–Off Switching Loss E
off
— 0.98 1.28 mJ
Turn–On Delay Time t
d(on)
— 73 — ns
Rise Time
(V
CC
= 360 Vdc, I
C
= 30 Adc,
V 15 Vd L 300 H
t
r
— 95 —
Turn–Off Delay Time
V
GE
= 15 Vdc, L = 300 H
R
G
= 2
0
Ω
,
T
J
= 12
5
°
C)
t
d(off)
— 394 —
Fall Time
R
G
=
20
Ω
,
T
J
=
125 C)
Energy losses include “tail”
t
f
— 418 —
Turn–Off Switching Loss E
off
— 1.90 — mJ
Gate Charge
(V 360 Vd I 30 Ad
Q
T
— 150 — nC
(V
CC
= 360 Vdc, I
C
= 30 Adc,
V
GE
= 15 Vdc
)
Q
1
— 30 —
V
GE
15
Vdc)
Q
2
— 45 —
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25″ from package to emitter bond pad)
L
E
— 13 —
nH
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
4–47
Motorola TMOS Power MOSFET Transistor Device Data
V
CE
= 100 V
5 µs PULSE WIDTH
V
GE
= 20 VT
J
= 25°C
V
CE
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics, T
J
= 25°C Figure 2. Output Characteristics, T
J
= 125°C
Figure 3. Transfer Characteristics
I
C
, COLLECTOR CURRENT (AMPS)
12.5 V
17.5 V
15 V
10 V
60
40
20
0
5420
V
GE
= 20 VT
J
= 125°C
V
CE
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (AMPS)
12.5 V
17.5 V
15 V
10 V
60
40
20
0
53210
T
J
= 125°C
V
GE
, GATE–TO–EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (AMPS)
60
40
20
0
118765910
25°C
V
GE
= 15 V
80 µs PULSE WIDTH
Figure 4. Collector–to–Emitter Saturation
Voltage versus Junction Temperature
T
J
, JUNCTION TEMPERATURE (°C)
3
2.6
1.8
150500–50
2.2
100
V
CE
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
13 4
I
C
= 30 A
22.5 A
TYPICAL ELECTRICAL CHARACTERISTICS
15 A
T
J
= 25°C
I
C
= 30 A
V
CE
= 0 V
GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation Figure 6. Gate–to–Emitter Voltage versus
Total Charge
C
oes
7200
0
25201550
Q
g
, TOTAL GATE CHARGE (nC)
16
12
8
0
140120100200
C, CAPAC
IT
ANC
E
(p
F
)
6400
5600
800
10
T
J
= 25°C
C
res
C
ies
V
GE
, GATE–TO–EMITTER VOLTAGE (VOLTS)
4
Q
T
Q
2
60
Q
1
1600
2400
3200
4000
4800
40 80