• формат pdf
  • размер 34.86 МБ
  • добавлен 19 марта 2010 г.
Sze, Ng. Physics of Semiconductor Devices
3-е перераб. и доп. изд. на английском языке - Wiley, 2007. (3-ed) (2007)
Монография написана известными американскими специалистами в области полупроводниковой электроники.
В книге изложена физика биполярных приборов (диодов, транзисторов и тиристоров) и приборов на основных носителях (полевых транзисторов с p-n переходом и барьером Шоттки), физика приборов на туннельном эффекте и оптоэлектронных устройств (светодиодов, лазеров, фотодетекторов и солнечных батарей), физика приборов наноэлектроники и транзисторов на гетеропереходах и с высокой подвижностью носителей (HEMT).
Для научных работников и инженеров, работающих в области электроники и вычислительной техники, а также для студентов старших курсов вузов.
Смотрите также

Baca A.G., Ashby C.I.H. Fabrication of GaAs Devices

  • формат pdf
  • размер 1.62 МБ
  • добавлен 17 декабря 2011 г.
The Institution of Engineering and Technology, 2009, 350 pages. Scope: This book provides fundamental and practical information on all aspects of GaAs processing. The book also gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography, and dry etching. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processin...

Brennan K.F., Brown A.S. Theory of Modern Electronic Semiconductor Devices

  • формат pdf
  • размер 6.81 МБ
  • добавлен 21 декабря 2011 г.
John Wiley & Sons, Inc., 2002, - 460 pages. The book contains nine chapters in total. The first chapter provides an overview of emerging trends in compound semiconductors and computing technology. Authors have tried to focus the book on the three emerging areas: telecommunications, quantum structures, and challenges and alternatives to CMOS technology. The balance of the book examines these three issues in detail. There are sections throughou...

Handbook of semiconductor manufactruring technology (2008)

Справочник
  • формат pdf
  • размер 74.09 МБ
  • добавлен 26 мая 2011 г.
Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area...

Levinshtein M., Kostamovaara J., Vainshtein S. Breakdown Phenomena in Semiconductors and Semiconductor Devices

  • формат pdf
  • размер 9.14 МБ
  • добавлен 11 декабря 2011 г.
World Scientific Publishing, 2005, 208 pages. Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdow...

Mizuta H., Tanoue T. The Physics and Applications of Resonant Tunnelling Diodes

  • формат pdf
  • размер 13.75 МБ
  • добавлен 04 октября 2011 г.
Cambridge University Press, 1995, 239 Pages. This book is the first to give a comprehensive description of the physics and applications of resonant tunneling diodes. The opening chapters of the book set out the basic principles of coherent tunneling theory. The authors describe in detail the effects of impurity scattering, femtosecond dynamics, non-equilibrium distribution, and intrinsic bistabilities. They review the applications of RTDs, such...

Oktyabrsky S., Ye P.D. (Eds.) Fundamentals of III-V Semiconductor MOSFETs

Статья
  • формат pdf
  • размер 12.24 МБ
  • добавлен 14 января 2012 г.
Сборник статей. Springer, 2010.- 445p. Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFE...

Tang D.D., Lee Y.-J. Magnetic Memory: Fundamentals and Technology

  • формат pdf
  • размер 2.78 МБ
  • добавлен 13 октября 2011 г.
Cambridge University Press, 2010, 196 pages If you are a semiconductor engineer or a magnetics physicist developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and how they are related to memory performance, characterization methods of magnetic films, and tunneling magnetoresistance effect devi...

Tarui Y. VLSI Technology (Fundamentals and Aplications)

  • формат djvu
  • размер 7.6 МБ
  • добавлен 07 марта 2011 г.
Springer 1986 (Tokyo 1981) pp.450. VLSI – Very Lage Scale Integration – Технология больших интегральных схем. . VLSI Technology summarizes the main results of the research performed by the Japanese VLSI Technical Research Association. The studies concentrated on silicon as the major basis of modern semiconductor devices. The results presented are on microfabrication technology, the electron-beam concept, the required software, the pattern transfe...

Tung C.-H., Sheng G.T.T., Lu C.-Y. ULSI Semiconductor Technology Atlas

  • формат pdf
  • размер 26.26 МБ
  • добавлен 25 сентября 2011 г.
Wiley, 2003, 666 pages More than 1,100 TEM images illustrate the science of ULSI The natural outgrowth of VLSI (Very Large Scale Integration), Ultra Large Scale Integration (ULSI) refers to semiconductor chips with more than 10 million devices per chip. Written by three renowned pioneers in their field, ULSI Semiconductor Technology Atlas uses examples and TEM (Transmission Electron Microscopy) micrographs to explain and illustrate ULSI proce...

Vashchenko V.A., Sinkevitch V.F. Physical Limitations of Semiconductor Devices

  • формат pdf
  • размер 8.22 МБ
  • добавлен 22 сентября 2011 г.
Springer Science+Business Media, 2008, 330 pages Providing an important link between the theoretical knowledge in the field of non-linier physics and practical application problems in microelectronics, the purpose of the book is popularization of the physical approach for reliability assurance. Another unique aspect of the book is the coverage given to the role of local structural defects, their mathematical description, and their impact on the...