
Electrical Properties 9.4 Semiconductors 507
concentric design minimizes electromagnetic interfer-
ence [9.41] and is suitable for integration of the cell into
a closed loop. Contamination with atmospheric carbon
dioxide from surrounding air is avoided for this type of
cell. For calibration it is integrated into a closed loop of
purified water together with a reference cell of known
cell constant, which is used to measure the conductiv-
ity of the purified water. In this way the purified water
in the loop is used as a transient reference material to
calibrate the commercial cell in-line and at the same
temperature.
The principle of a primary reference flow-through
cell [9.42] is shown in Fig. 9.30. It consists of two in-
ner cylindrical electrodes of different lengths l
1
and l
2
and an concentric outer electrode, which herby form
two conductivity measurement cells. The gap between
the inner electrodes is filled with inert, nonconduct-
ing material. Platinum resistance temperature sensors
are mounted in each inner electrode. The cell con-
stant of each cell can be calculated from the inner
and outer diameter D
i
and D
o
, respectively, and from
the lengths of the inner electrodes according to (9.31).
Fringe effects at the holes and at the end of the elec-
trodes are considered in terms of an effective stray
length a
K
1
=
ln
(
D
o
/D
i
)
2π(l
1
+a)
,
K
2
=
ln
(
D
o
/D
i
)
2π(l
2
+a)
. (9.31)
Since the two cells just defer in length, a can be as-
sumed equal for both cells. Using κ = K
1
/R
1
= K
2
/R
2
(9.22) the effective stray length can be calculated from
the measured resistances R
1
and R
2
of the pure wa-
ter in the two cells. The cell constants are of the order
of 1 m
−1
with a relative expanded target uncertainty
(k =2) smaller than 0.5%. Because cell dimensions, re-
sistance and temperature measurements are measured
traceable to the SI unit, the conductivity of the high-
purity water can thus be determined in the SI unit S/m.
Another promising design of a primary flow-
through cell is based on the on the so-called van der
Pauw principle which is used extensively in solid-state
physics to measure surface resistivity. The principle is
based on a theorem similar to that of Lambert used for
the determination of the capacitance unit. The theorem
can be applied to a cell with constant cross section and
with four electrodes at the edges [9.43].
9.4 Semiconductors
Semiconductor materials offer a wide range of con-
ductivity according to their free carrier concentration,
starting from the intrinsic conductivity (10
−8
S/cm) up
to 10
5
S/cm by controlling the doping concentration
from 10
12
up to 10
21
cm
−3
. Thus, the determination of
the conductivity, conductivity type (n- or p-doped), and
the related majority carrier mobility are the most impor-
tant characterizations, especially in the case of newly
developed materials.
After these majority carrier properties are known,
minority carrier properties come into consideration,
which are mainly related to lattice defects (vacancies
and interstitials), but also to chemical impurities, which
produce (deep) electron or hole states within the band
gap. The most important parameter is the minority
carrier lifetime which is applied to describe leakage cur-
rents of p-n junctions, charge storage times in dynamic
memory cells or sensitivity of charge-coupled device
light sensors.
With respect to high-speed devices, like e.g. bipolar
transistors or photodiodes, saturated drift velocity val-
ues are needed to estimate the high-speed performance.
Many semiconductor devices reach their operating lim-
its with respect to some breakdown mechanisms, like
the onset of tunneling currents or impact ionization.
Table 9.5 gives a selected list on semiconductor
properties and related methods to determine their val-
ues. The following paragraphs give some guidance to
determine the most relevant parameters useful for de-
vice simulation, device design, and device analyses.
As all semiconductor devices need a more or less
ideal contacting of their active regions via metallization
of ohmic contacts, the final section collects measure-
ments methods for specific contact resistances.
9.4.1 Conductivity Measurements
Conductivity measurements on semiconductors are pre-
dominantly related to bulk material, e.g. semiconductor
wafers and epitaxial layers or layer stacks. The conduc-
tivity σ (S/cm) is related to the specific resistance ρ
(Ω cm)
σ =
1
ρ
.
(9.32)
Part C 9.4