134 3 Formation of Mixed Crystals in Solutions
complex cores were detected in crystals of KAP and RbAP grown up in pure solu-
tions (a–d). The hillocks of KAP and RbAP differ respectively by absence and
presence of faceting, isometry, and oblongness, and also in having monolayer and
multilayer growth steps. Reactions between crystals and foreign solutions (e–r) are
represented by different combinations of simultaneously generated elements of
growth and dissolution. They include autoepitaxial excrescences on the bottoms of
the etch pits (e, j, m, o), step sites growing on the inner sides of the etch pits (f, g,
h, p), overlapping the pits with excrescences (i), and formation of layers covering
the dissolution surface (k, l, n). These interactions undoubtedly represent mutual
correlation between dissolution and growth processes at the starting stages of
replacement: judging by the distinct development of elements at both stages, it can
be concluded that after 1 s interaction (g, i–p), initiating of salting-out requires less
than several tenths or even hundredths of a second. The process rate is so high that
monitoring requires to be done with a step, which would not exceed 0.1–1 s, and
thus was unavailable.
Difference in the excrescence morphology seems to qualitatively reflect their
composition in accordance with morphology of hillocks observed in pure media:
the elongated hillocks are enriched with rubidium component (e, o), while isomet-
ric hillocks are enriched with potassium component (i, k, m). Shapes of the etching
pits also vary from elongated (e, j, k) to isometric (i, o, p) regardless to associated
excrescence habits. The etching pits are usually, but not necessarily, joint with the
growth formations: the pits may be free from apparent growth elements (i, a shal-
low long pit on the right) and the growth layers may be developed separately from
the etching formations (l, n). These peculiarities are likely to represent composi-
tional heterogeneity of the diffusion layer in longitudinal direction. Absence of
apparent correlation in localization of the dissolution and growth elements does not
allow to determine, whether the initial process mechanism was volume-deficient
(m–p) or volume-excessive (i–l).
3.4.2.5 Physicochemical Interpretation
Replacement processes in (K,Rb)AP series are more complicated in comparison
with those occurring in (Co,Ni)(NH
4
)
2
(SO
4
)
2
⋅6H
2
O series. The former systems
develop the spongy structure only within the edge region, while in the latter series
it consumes the whole crystal. In the former systems the autoepitaxial excrescences
are coupled with development of the spongy region, while in the latter series these
formations are produced independently. This dissimilarity arises from different
solubility ratios in the systems concerned, which is reflected in convex shapes of
isotherms plotted for the former system and absence of convexity in the isotherms
of the latter system.
Total solubility in (Co,Ni)(NH
4
)
2
(SO
4
)
2
⋅6H
2
O–H
2
O system in any figurative point
is lower than the solubility of any crystal, relatively enriched with the Co-component
in comparison with the equilibrium crystal, thus total solubility derivative of a pure
Ni-component content in solution is always less than unity. When a Co-enriched