106 3 Formation of Mixed Crystals in Solutions
One of the complications is an arbitrary configuration of the composition trajectory
of solution interacting with the crystal that undergoes replacement, which may
affect a zoned structure and shape of the produced pseudomorphs.
For example, transition of the system to state M
2
occurring during replacement of
initially pure K-Cr alum may proceed, generally with volume deficit, along any path-
ways within the limits of quadrangle Fi
2
′b
2
M
2
. If the trajectories coincide with the
extreme lines F–b
2
–M
2
and F–i
2
′–M
2
, their sectors b
2
–M
2
and F–i
2
′ correspond to the
periods of isothermic replacement with volume deficit. When the process proceeds
along the trajectory F–b
2
–M
2
, the produced pseudomorph will bear some signs of the
initial crystal dissolution, while if it assumes F–i
2
′–M
2
trajectory, the signs of
the pseudomorph dissolution will appear. Location of the process trajectory within
the limits of quadrangle Fi
2
b
2
M
2
indicates absence of dissolution independent stage.
It can be considered that replacement is accompanied by extra dissolution, similar to
metasomatic component accompanying the dissolution within the sector a′Fb′.
On one hand, configurations of the trajectories are determined by size and com-
position of the protocrystal, and on the other hand, by the ratio between the rates of
heating and metasomatic reaction. If the protocrystal contains (A,B)-component,
the right line of the delimiting quadrangle shifts into the region of dissolution a′Fb′
(e.g., along the line Fb
2
′b).
Another complication occurs in the region a′Fb
i
. The main analysis of the process is
similar in to the previous one, the exception being that a′Fb
i
region is divided into two
parts. In b
i
Fv
b
part and the adjoining sector of the isotherm Fb
i
the process proceeds
with volume excess, while in a′Fv
b
part the process proceeds with volume deficit.
(b) Replacement at lowering temperature (regions aFa
i
and bFb
i
) is also complicated
in comparison with isothermal process or replacement at rising temperature. It is
caused by the indefinite character of combination with the normal growth.
One of the complications (as in the case of replacement when the system is
heated) consists in arbitrary appearance of the trajectory of liquidus composi-
tion corresponding to a specific shape and zonal structure of pseudomorphs.
For example, the system transition from the state F to the state M
3
during
replacement of crystal B can take any pathway within the limits of the quadran-
gle Fb
1
′i
3
′M
3
. When the trajectory occupies the extreme position F–b
1
–M
3
, the
replacement is preceded by autoepitaxial growth of the pure phase A over
the initial crystal B, and the replacement proceeds according to volume-excess
isothermal mechanism. Naturally, shielding layer A causes additional com-
plexities, but they are not considered at present. Another extreme trajectory
F–i
3
′–M
3
corresponds to the initial stage of volume-excess isothermal replace-
ment followed by growth of the pure phase B over a pseudomorph. Composition
of the protocrystal, its mass, and cooling and replacement rates determine con-
figuration of the trajectory.
One more complication, which is also similar to the above replacement with
heating, consists in dividing the region aFa
i
into two parts. Within the part a
i
Fv
a
and
in the adjoining sector of isotherm Fa
i
the process is volume-deficient, while in the
part aFv
a
it is volume-excessive.