
Zero-Dimensional Nanostructures: Nanoparticles
79
of the nanocrystals. From the same reaction mixture, isolated
2-5nm
nanocrystals are obtained, and if small enough volumes of methanol are
used, a sufficiently careful precipitation series can resolve size distribu-
tions separated by as little as
0.15
nm.50
Thermal decomposition
of
complex precursor in a high-boiling solvent
represents another method in the production of compound semiconductor
nanoparticles with a narrow size di~tribution.~~~~~ For example, when
GaC13 is mixed with P(SiMe3)3 in a molar ratio of Ga
:
P of
1
:
1
in toluene
at room temperature, a complex Ga and P precursor, [C12GaP(SiMe3)2]2 is
f~rmed.~~.~~ Similar reactions may occur by mixing chloroindium oxalate
and P(SiMe,), in a predetermined molar ratio in CH3CN for the formation
of InP complex precursor,
or
mixing chlorogallium oxalate, chloroindium
oxalate and P(SiMe3)3 in a desired molar ratio in toluene at room temper-
InP, GaP and GaInPz high-quality nanocrystallites are formed by
heating the complex precursors dissolved in high-boiling solvent contain-
ing a mixture
of
TOP and TOPO as a colloidal stabilizer at elevated
temperatures for several days. The typical thermal decomposition of InP
precursor solution in TOP/TOPO at elevated temperatures produces InP
nanocrystals capped with TOP05*:
InP precursor
+
(C8HI7),PO
+
InP-(C8H17)3P0
+
byproducts
(3.37)
Such prepared nanoparticles
of
InP, GaP and GaInP, are well crystallized
with bulk zinc blende structure. An increase in heating duration was found
to improve the crystallinity of the nanoparticles. Different particle sizes
ranging from
2.0
to
6.5
nm are obtained by changing the precursor con-
centration or by changing the temperature. The narrow size distribution is
achieved due to (i) the slow process rate
of
the decomposition reaction of
the complex precursors and possibly (ii) the steric diffision barrier
of
the
TOP and TOPO stabilizer monolayer on the growing surface of nanopar-
ticles51 The addition of methanol into the colloidal solution results in the
precipitation of nanoparticles.
Thermal decomposition of complex precursors is also applied in the
synthesis of GaAs nanoparti~les.~~,~~ For example, when an appropriate
amount of Li(THF)2As(SiMe3)2 (THF
=
tetrahydrofuran) is added to
a
pentane solution
of
[(C5Me5)2GaC1]2, followed by filtration, evaporation
of the solvent, and recrystallization, pure arsinogallane complex precursor,
(C5Me5)GaAs(SiMe3)2 is produced. This complex precursor, when dis-
solved in organic solvents such as alcohol, undergoes thermal decomposi-
tion to form GaAs nanoparticles when heated above 60°C or exposed to
air.55 When
tris(trimethylsily1)arsine
reacts with gallium chloride, complex
GaAs precursors can be prepared.57 GaAs nanocrystals can be prepared by