Poole Ch.P., Jr. Handbook of Superconductivity

4~

Material

Cu-Nb 3 Sn

Tio.45Nb0.40 Si0.15

Nb-Ti-Si alloy

Oxidized polypropylene

K 3 C60 ,

fullerene

Rb 3 C60 , fullerene

Nd1.85Ce0.15CuO4_6

YBa2Cu307_ &

Table 9.6.

(continued)

J~

(A/cm 2)

Bapp

(tesla)

meas

(K)

Comments

6x 10 4

104

1.2 • 10

4

4.5 x 103

3.5 x 104

4.0x 105

1.7 x 105

2.7 x 104

1 • 104

104

1.2 x 106

1.5 • 10

4

105

108

1.3 • 105

4x 106

8x 105

108-10

9

107-108

4 • 106

104

3.5 x 107

1.3 • 106

18

19

16

18

15

11

15

21

17

12

5

1

0

20

0

4.2

7

4.2

77

77.3

4.2

77

Studies of Ta, Ti, Ni + Zn addition;

see B c table

Multifilamentary wire with 7.5% Ta

2 wt% Ti; see B e table

2 wt% Ti; see B c table

Ti addition

CVD tape

Diffusion processed tape

Tape prepared from

Nb 6

Sn5; see

B e table; adding Ge improves T c, Jc

Bronze processed multifilamentary

wire

Multifilamentary composites

Composition range studied,

Tc = 9.9K

Amorphous alloy after crystallization

Effects of aging studied

Material has conducting channels

Thin film, T c -- 22.4 K

Below depairing limit

c-axis oriented films

Epitaxial films

Reference

Drost (1985)

Flukiger (1985)

Schaper (1987)

Sharma (1987)

Zhou (1983)

Tachikawa (1996, 1997)

Watanabe (1991)

Flukiger (1979)

Inoue (1980)

Inoue (1981)

Ishida (1981)

Demicheva (1990)

Holczer (1991 )

Politis (1992)

Mao (1993)

Tsuei (1988)

Hitotsuyanagi (1989)

Lensink (1989)

4~

..q

DyBa2Cu3 O7_ 6

EuBa2Cu3 O7_6

LuBa2Cu3 O7_ 6

1.2 x 10 6

3xlO 5

1.6 x 10

7

2xlO 7

2.7 x 10 6

1.2 x 10 6

3xlO 5

2.4 x 10 4

1.4 x 105

8.1 x 105

5.8 x 106

2.7 x 106

2.5 x 104

3.25 x 107

0.9 x 10

7

4.9x 106

1.2 x 10

6

2x 104

> 105

1.4 x 106

4.5 • 106

0

30

0

0.3

53

77

4.2

5

44

77.3

77

10

77

4.2

90

77

Primarily c-axis oriented film

Thin film on several substrates

Thin film, tetragonal phase, T c = 87 K

10 wt% Ag doped thin films on MgO

20 wt% Ag doped thin films on MgO

Angular and field dependence studied

Jc measured for different Bap p and a, b

plane orientations

B _1_ c, J = J0 exp(-T~

To),

T o = 27 K, monocrystal

B]]c, J -- Jo exp(-T/To),

To = 40 K

monocrystal

Thin film with Ag doping

Film prepared by MOCVD

Thin film unirradiated, T c = 89 K

Thin film after He + irradiation

Jc(B, T) ~ Jc(B,

0)[1 -

o~(T/Tc)

-~(T/Tc)2];

thin film

Jc = "]cO( 1 -t- t)2(1 - t) 1"75 x

[1 - (~/~c2)]

Electron spin resonance (ESR)

method

SNS, many Josephson junctions

reported

With Dy2BaCuO 5 pinning centers,

intergrain Jc is given

Sputtered film, T c = 93 K, microwave

measurement

Thin film grown on LaA103

Singh (1991)

Gorbenko (1993)

Garcia Lopez (1997)

Kim (1997)

Watanabe (1991)

Ren (1990)

Moshchalkov (1991 )

Moshchalkov (1991)

Clausen (1996)

Matsuno (1991)

Agarwal (199 l)

Agarwal (1991)

Cui (1992)

Kes (1988)

Meshcheryakov (1992)

Akoh (1991)

Cloots (1995)

Asano (1991)

Pinto (1994)

(continued)

4~

Material

NdBa2Cu3 O7_,~

TmBa2Cu3 O7_ 6

CuBa2Ca3 Cu40 x

BiSrCaCuO with Pb

Bi2 Sr2CaCuzOy (Bi-2212)

Table 9.6.

(continued)

J~

(A/cm 2)

Bapp

(tesla)

meas

(~

Comments

3.7 x 105

4.5 x 10

4

7.1 x 104

2.5 x 106

106

104

1.26 x 10

4

1.2 x 105

5 • 104

104

2.4 x 105

> 105

8x 103

106

3 • 104

3.6 x 104

1.8 x 104

5

1

0

1

10-23

12

10

Self field

0

12

20

77

0

5

77

77.3

4.2

78

4.2

77

4.2

4

Polycrystalline

BIIc,

Nb4Ba2Cu2010 particles added

Monocrystal, Ba site doped 10% with

Nd

Exponential temperature dependence

T c = 117 K, polycrystal,

Jc~B-m;Jc

~[1

-(r/rc)] n,

n = 5.24

T c = 117 K, polycrystal,

Jc "~B-m;Jc

~[1

-(T/Tc)] n,

n= 5.24

Ag sheathed tapes

Ag-sheathed tape, Bap p parallel to tape

Anisotropy approx 103 near Tc;

Jc ~ [1-

(T/Tc)] m

near T c where

m = 0.7 longitudinal, m = 1.0

transverse

Ag tape

Ag tape; effect of 02 pressure studied

Ag-clad tape

Multilayer tape

Superconducting fraction 18% yields

wire Jc = 1.7 • 105

At edge of core of Ag-sheathed tape

In central region of Ag-sheathed tape

Reference

Fujihara (1997)

Takagi (1995)

Egi (1995)

Moshchalkov (1990)

Iyo (1997)

Hitotsuyanagi (1989)

Enomoto (1990)

Bulyshev (1991 )

Shimoyama (1993)

Inoue (1997)

Balachandran (1997)

Hasegawa (1996)

Herrmann (1997)

Pan (1997)

4~

Bi2.o Sr2.2 Cao.8 CUl.90x

Bi2 Sr2Ca2Cu3Oy (Bi-2223)

1.4 x 104

106

250

1.13 x 105

3x107

4x 105

>2x 105

4x

104

1.8 x 105

3x 104

104

5.5 x 103

7x 104

1.2 x 104

5 x 103

2.3 x 104

4x 103

8x

102

2x 104

4x 103

0

4

0

0.5

1

15

0

1

0

1

77

4.4

71

4.2

20

77

4.2

77

4.2

77

4.2

77

81

77

Tape; column 2 gives average

Jc; local values were found up to

7.6 x 104

Monocrystals, doping with Pb, Ba, Li;

Jc enhanced by Pb substitution for Bi

Whisker composite

Thick film

Pb doped thin film on MgO,

re = 83K

Pb doped thin film on MgO,

rc = 83I{

Ag tapes

> 1 m long monofilamentary tapes

> 1 m long monofilamentary tapes;

Bapp II tape surface

> 1 m long monofilamentary tapes;

Bapp II tape surface

> 1 m long monofilamentary tapes;

Bapp II tape surface

17 m long 19 filament Ag tape

100 m long 19 filament Ag tape

Pb doped, almost single phase tape;

Jc -- 140A/cm2 for corresp, cermaic

Bapp II plane of tape

Bapp _1_ plane of tape

Pressed and cold rolled Ag-sheathed

tapes compared

Pressed and cold rolled Ag-sheathed

tapes compared

Larbalestier (1994)

Fujii (1991)

Funahashi (1994a, b)

Hasegawa (1995)

Kuroda (1990)

Flukiger (1992)

Grasso

et al.

(1995)

Grasso

et al.

(1995)

Grasso

et al.

(1995)

Grasso

et al.

(1995)

Grasso

et al.

(1995)

Fischer (1995)

Babic (1995)

Grasso (1993)

(continued)

4~

",,I

Table 9.6.

(continued)

Material

Jc

(A/cm 2)

Bapp

(tesla)

meas

(K)

Comments

Reference

4.7 x 104

2x 105

2.8 x 104

4.5 x 10

4

3.0x 10 4

3x 10 4

10

4

5.4 x 103

1.6 x 105

6x 104

105

Self field

2 mT

28

0

0.5

1

0

15

13

4.2

77

4.2

77

4.2

Pressed and cold rolled Ag-sheathed

tapes compared

Current flows adjacent to Ag sheath

of the tape

Average Jc is given in column 2;

Jc = 2.0 • 104 at center, 5.3 x 104 at

sides

B II surface, multifilament tape

B _1_ surface, multifilament tape)

Average Jc is given in column 2;

Jc -- 1.7 x 104 at center, 4.6 x 104 at

sides

B Ilsurface, multifilament tape

Multifilament tape

Ag-Mg(Ni)O-sheathed monocore

tape

Grasso (1993)

Lelovic (1996)

Grasso and Flukiger (1995)

Flukiger (1995)

Flukiger (1995), Grasso

(1994)

Grasso (1994)

Yamada (1997)

T12Ba2CaCu208 (T1-2212)

T12Ba2Ca2Cu30y (T1-2223)

T1-2223 with Pb

T1-1234 with Pb

T1Ba2Ca2Cu3Oy (T1-1223)

2.6 x 104

3.5 x 105

104

1.5 • 104

5.5 • 103

1.08 • 10

4

6.2 • 103

250

103

1.5 x 105

1.2 x 104

1.5 x 103

1.3 • 103

9x 104

7x 10 3

1.1 x 10 s

> 104

5.9 x 106

1.1 x 104

12

0

1

6

0

5

16

0.7

0

1

0

2

4.2

77

75

45

77

60

10

77

Ag-Mg(Ni)-sheathed multifilament

tape

Epitaxial film, T c = 100.7 K

Polycrystalline tape-shaped wire

Jc in 150 #m thick diffusion layer

Field dependence studied, Ag-

sheathed wire

Field dependence studied, Ag-

sheathed wire

Ag-sheathed tape

Bapp

II

ab

plane

Bapp

II

ab

plane

Bap p _1_

ab

plane ~

Textured Ag tape

Textured Ag tape,

Bllc

Thin film, different T1 contents used

Thin film, different T1 contents used,

Bllc-axis

Hg-doped polycrystal with

Yamada (1997)

Young (1991 )

Okada (1991)

Kikuchi (1996)

Takei (1990)

Peterson (1992)

Nabatame (1992)

Doi (1995)

DeLuca (1993)

Chang (1996)

(continued)

..q

4~

,,q

t',a

Table 9.6.

(continued)

Material

Jc Bapp Tmeas

(A/cm 2) (tesla) (K)

Comments

Reference

Tlo.5 Pbo.5 Sr2 Ca 2

CU 3 09

Tlo.5 Pbo.5 Sr2_xBaxCa 2

Cu 3 09_ 6

Tlo.5 Pbo.5 Sro.8 Bao.2 Ca2Cu3 09_6

T1Bio.22 Srl.6Bao. 4 Ca 2 Cu 3 09_ 6

HgBa2 CUO4+6

Hg(Ba 1

--x Srx)2

CaCu2 Rey O z

1.24 x 105 1 77

2 x 105 1 80

2 x 104 1 77

2 x 104 77

7 • 104 0.8 20

> 2 x 103 0 77

Ceramic with Tc ,~ 120 K

Jc varies slightly with grain

connectivity and c-axis

alignment

Grain aligned, Jc est. by

Bean model

Mixed phase 1212 and

1223, max Jc for x = 0.5

and max T c = 130 K for

x=0.2

Liu (1992)

Pugnat (1996)

Peng (1993)

Ren (1994)

Lewis (1993)

Goto (1996)

E Critical

Currents

473

Critical Currents

There are a number of ways to determine the critical current I c in a wire, and a

simple way to do so is to send more and more current through the wire until it

goes normal. If the assumption is made that the density of current is uniform

through the wire, then the critical current density Jc is obtained by simply

dividing the critical current by the cross-sectional area of the wire, Jc-

Ic/A.

Actually, some workers have reported higher current densities at the outside part

of the wire, as mentioned in Table 9.6 (Lelovic

et al.,

1996; Grasso and Flukiger

1995, Flukiger

et al.,

1995). A common way to estimate Jc is to measure a

hysteresis loop in high field and make use of the Bean-model formula

Jc-

1.59

x 106/'t~ (A/m2),

(26)

d

where AM- M + -M_ is the difference in magnetization between the top and

the bottom of the hysteresis loop, and d is the diameter of the sample grains in

meters. This an MKS or SI formula; in the cgs system it becomes

30AM

Jc-- d (A/cm2)' (27)

where d is now in centimeters. This constitutes one of the most important

applications of the Bean model that is discussed in Section H of Chapter 4.

Table 9.6 lists critical current densities measured for a number of super-

conducting materials. Almost all measured values are far less than the theoreti-

cally attainable limits predicted by Eqs. (11) and (12). One of the most pressing

technological challenges at the present time is the achievement of depairing

current densities in superconducting wires and tapes.

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