4.6 Discussion of the Dielectric Function 109
ε
1
(q,ω) ≃ 1 − v
q
¯h
2
q
2
m
1
(¯hω)
2
k
f
k
=1−
Ne
2
ε
0
Vmω
2
(4.137)
or for q → 0
ǫ
1
(q,ω) ≃ 1 −
ω
2
p
ω
2
,ω
2
p
=
e
2
ε
0
m
N
V
. (4.138)
Apparently, the energy–loss function has a singularity at the plasma frequency
ω
p
. As the typical result of RPA it represents a collective excitation, the plas-
mon, in which all particles of the electron system participate. Moreover, it
obeys a sum rule, which can be expressed in terms of ω
p
(Problem 4.10).
We note that (
4.138) does not contain ¯h. This indica tes the possibility of
an interpretation in terms of classical physics. In fact, the classical equation of
motion of a single electron in an electric field E, determined by the dielectric
polarization E = −P /ε
0
= ner/ε
0
of the electron system with density n =
N/V ,reads
m
¨
r = −
e
2
ε
0
N
V
r or
¨
r = −ω
2
p
r . (4.139)
In the long wavelength limit each electron of the system experiences a restoring
force characterized by the plasma frequency when (in the collision with a fast
charged particle) the system is displaced again st the jellium background. For
finite q,oneobtainsfromε
1
(q,ω)=0
ω
2
p
(q)=ω
2
p
1+
3
10
q
2
¯h
2
k
2
F
mω
2
p
+ ...
!
, (4.140)
where the second and higher order terms indicate quantum mechanical
corrections to the classical result.
The typical RPA sp ectrum, consisting of the particle–hole continuum and
the plasmon mod e, as depicted schematically in Fig. 4.15, can be translated
for small momentum transfer into the real and imaginary part of the dielec-
tric function as shown in Fig. 4.16: ε
2
(q,ω) is determined by the particle–hole
continuum giving contributions only at low frequencies, while ε
1
(q,ω), show-
ing a more complex frequency dependence, starts at ω = 0 with the value
defined by the Thomas–Fermi screening parameter k
FT
(see Problem 4.11),
changes sign around the upper cut-off frequency of the particle–hole excita-
tions, passes through zero at the plasma frequency, and approaches 1 for high
frequencies. These characteristic features are also found in the experimental
data, e.g., [
5, 89].
In metals with electron densities of the order of 10
23
cm
−3
(see Table 4.1),
the plasmon energy ¯hω
p
is about 1 Ry and determines the response in an
energy-loss experiment in this energy range. In contrast, doped semiconduc-
tors represent diluted metallic systems with much lower plasmon energies,
which can be tuned by the concentration of the dopands in the range of