80 4 The Free Electron Gas
Table 4.1. Parameters (n in cm
−3
, k
F
in
˚
A
−1
, v
F
in 10
8
cm s
−1
, E
F
in eV, T
F
in
10
4
K) for different fermion systems realized in solids
System nr
s
k
F
v
F
E
F
T
F
K1.43 · 10
22
4.83 0.75 0.87 2.14 2.48
Cu 8.53 · 10
22
2.66 1.36 1.57 7.05 8.18
n-GaAs 10
17
1.29 0.014 0.25 0.75·10
−3
0.0009
n-GaAs 10
20
0.129 0.143 2.5 0.078 0.09
p er atom, forms a face centered cubic lattice with four atoms and consequently
four electrons in the elementary cube. Given the lattice constants a
K
=5.31
˚
Aand
a
Cu
=3.61
˚
A one easily obtains the electron density n and the other system param-
eters depending on n. The values given in Table 4.1 for K and Cu are characteristic
for normal and noble metals, respectively. For comparison we also quote numbers
for n-GaAs with two different doping concentrations.
In evaluating the electron density of the metals, we have only considered the
valence electrons outside of closed shells. Similarly, in doped semiconductors we
count only the extra electrons provided by electron donating impurity atoms (e.g.,
Si substituting Ga in GaAs) to d etermine n. The properties of these extra electrons
deviate, however, from those of free electrons in vacuum. Their energy–momentum
relation is modified by the periodic crystal potential and becomes a band structure
(see Chap.
5), in which t hese extra electrons occupy states at the bottom of the
conduction band with a disp ersion similar to free particles but with an effective
mass m
∗
different from the free electron mass m; their charge is screened with
the (relative) dielectric constant ε. Correspondingly, the system Hamiltonian would
contain these modified electron parameters in the kinetic energy and in the electron–
electron interaction. Therefore, the atomic units are redefined as effective units a
∗
B
=
(εm/m
∗
)a
B
and 1 Ry
∗
=(m
∗
/mε
2
)Ry. In these units, one obtains for the two doping
concentrations in n-GaAs with m
∗
/m =0.066 and ε =12.9 the corresponding
parameter values given in Table 4.1 . In spite of their much lower particle density
the doped semiconductors appear as interacting fermion systems with much higher
density (smaller r
s
) than the metals. This is due to the much larger effective Bohr
radius, which is the length scale for the interaction.
Fermion systems with quite different densities are realized in neutron stars and
systems of atoms confined in electromagnetic traps. Neutron stars have a radius of
about 10 km and evolve from the gravitational collapse of small stars with about the
mass of the sun. They can be described as an ideal Fermi gas with the extremely
high density of 10
38
cm
−3
! The other extreme of very low densities is obtained by
cooling ensembles of fermionic atoms confined in electromagnetic traps to extremely
low temperatures (T
F
< 1μ K), at which they represent degenerate Fermi systems
(see Physics Today, October 2003, p. 18).
Knowing the single-particle energy-momentum relation ǫ(k)of(
4.10), one
can derive the spectral distribution of the electrons using (
4.12):
D(E)dE = D(k)
dk
dE
dE =
mV
π
2
¯h
2
%
2m
¯h
2
√
EdE. (4.21)