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Radiation Effects in Quantum Dot Structures 439
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Probing and Controlling the Spin State of Single Magnetic Atoms
in an Individual Quantum Dot
L. Besombes
, Y . L e g e r
, L. Maingault
, D. Ferrand
, J. Cibert
, and H. Mariette
CEA-CNRS group “ Nanophysique et Semiconducteurs ” , Néel Institute, CNRS and University
J. Fourier, 25 avenue des Martyrs, 38042 Grenoble, France
14.1 Introduction
As the size of magneto-electronic devices scales down, it becomes increasingly important to
understand the properties of a single magnetic atom in a solid-state environement [1–5] . Atomic
scale surface probes have been succesfully used in this regard [1–3] . More recently, optical prob-
ing of both magnetic [4] and non-magnetic [6] atoms in semiconductors has been demonstrated.
Magnetically doped semiconductors have been used in the fabrication of electrically active
devices that control the magnetic properties like transition temperature and coercitive fi eld [7–9] .
In these devices a macroscopic number of magnetic atoms was manipulated. We will present
here electrically active devices that control the charge state of an individual II–VI quantum dot
(QD) doped with a single Mn atom. Single dot micro-photoluminescence measurements reveal
that the magnetic anisotropy and spin confi guration of the single Mn atom are very different
depending on the charge state of the dot, which can be 0, or 1e. Thereby, these devices are able
to tune the magnetic properties of a single Mn atom embedded in a QD and represents a fi rst step
in the implementation of several proposals of electrical control of the magnetism in Mn-doped
quantum dots [10–13] .
Quantum dots doped with magnetic atoms and fi lled with a tunable number of carriers can
behave like tunable nanomagnets. Indeed, as it has been theoretically shown, the parity of the
number of confi ned carriers can drastically change the magnetic properties of the localized mag-
netic moments [11–15] .
In a magnetic QD, the sp–d interaction takes place with a single carrier or a single electron–
hole pair. However, besides effects related to the carrier–Mn-ion exchange interaction such as
giant Faraday rotation and strong Zeeman shift, it was found that even a small content of Mn
introduced in a II–VI semiconductor material can strongly suppress photoluminescence if the
energy gap E
g
exceeds the energy of the Mn internal transition. This strongly limits the study
of individual diluted magnetic semiconductor quantum dots [16] . The fi rst studies of individual
quantum dots doped with Mn atoms were reported by Maksimov et al. [17] . They studied CdMnTe
QDs inserted in CdMgTe barriers in which the optical transition energies are lower than the
energy of the internal transition of the Mn atom. This suppresses the non-radiative losses due
to the transfer of confi ned carriers to the Mn energy levels. This system allowed the formation
of a quasi zero-dimensional magnetic polaron to be observed. Moreover, the broadening of
the emission lines caused by the magnetic fl uctuations in the environment of the recombining
electron–hole pair was controlled by an external magnetic fi eld.
CHAPTER 14
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