Index 839
electron spin relaxation dynamics, polarization
dynamics as probe of , 496 – 498
hole spin relaxation in QDs , 498 – 501
mechanisms for , 495 – 501
nuclear , 121
in semiconductor NCs , 495 – 496
Spin representation , 697 – 701
Spin-spin coupling , 457
Spintronic devices, spin-LEDs and QDs potential in ,
116 – 121
Spintronics , 813
SQD spectroscopy , 387
SRL . See Strain-reducing-layer (SRL)
Stackings
fcc , 42 , 43
as function of spacer thickness , 38 – 39
of ordered InAs QD , 547 – 549
of spheres , 372
staggered , 48
transition , 18 , 20 , 24
Staggered dot stacking , 3
Staggered dot stacking , 21 , 51
3D , 11
formation of , 17 , 25
in multilayer structures , 20
Stark effect , 218 , 219 , 222 , 252 – 258 , 372
Stark shift , 93
Step bunching , 49
STM inside MBE chamber (STMBE) , 275
Stored elastic energy , 63
Strain distribution , 5 – 6 , 14
anisotropic, infl uence of , 460 – 462
anisotropic, infl uence on QDs doped with single
magnetic atom , 460 – 462
in SK self-assembled QDs , 236 – 240
Strained fi lms, growth of , 64
Strained heterostructures , 168
Strained-layer heteroepitaxy , 1
Strain energy
density , 17
distribution , 13 , 29
variation in , 6
Strain-fi eld interactions in multilayer structures , 4
elastic anisotropy, effect of , 7 – 12
isotropic point-source model , 5 – 7
near-fi eld strain interactions , 12 – 16
stacking conditions and replication angles , 16 – 21
Strain-reducing-layer (SRL) , 535
Strain relaxation , 507
non-equilibrium models of , 508
Stranski-Krastanov islands
nucleation of , 47
overgrowth of , 48
Stranski – Krastanov mode , 328
Stranski-Krastanow dots , 1 , 64 , 85 , 86 , 165 , 171 ,
173 , 231 , 271 , 280 , 556 – 558
of GaN on AlN , 203 , 204 , 205 , 206
intermixing of , 17
nucleation and growth of , 27
nucleation of , 2
self-assembled , 22
growth of , 49
self-assembled, formation of , 4
strained, lateral ordering of , 6
strain-induced , 372
Stresses in fi lm, non-zero component of , 62
Stress relaxation
agents of , 335
effective channels for , 422
Strong coupling regime , 134 , 136 , 142 , 359
exciton-photon , 140
Strong electric fi elds
existence of , 259
Subcellular distribution , 804
Sub-picosecond pulse generation , 606 – 609
Superlattices
Fcc -stacked , 39 , 41
with staggered dot stacking, ordering process for , 43
Superluminescent diodes . See Superluminescent light-
emitting diode (SLED)
Superluminescent light-emitting diode (SLED)
applications of , 565 – 567
fabrication of tilted ridge-waveguide , 580
growth temperature to from dots , 572
modelling of spectral characteristics of , 590 – 595
output power of , 574 – 575
potential improvements in , 596 – 597
QD growth for , 569 – 574
quantum dots for , 567 – 569
spectral width of , 569 – 570
temperature characteristics of , 583 – 587
wide-spectrum InAs/GaAs , 574 – 587
coherence length , 582 – 583
gain and length requirements , 574 – 578
narrow-gain devices , 578 – 579
wide-gain devices , 579 – 582
Superluminescent light-emitting diodes (SLED) , 102
Surface acoustic wave (SAW) devices , 293
Surface capping , 800
Surface-covered molecule structures , 801
Surface dots, strain fi elds of , 28
Surface mass transport , 48
Surface modifi cations , 804
Surface roughening, negative effect of , 64
Surface roughness , 70
Surface segregation , 2
Surface strain energy distributions , 4 , 5 – 6 , 9 , 14 , 16 ,
18 , 19 , 30
as stress source , 7
Surface strain minima , 3 3
Surface stress , 2
Swift heavy ions (SHI) , 433
Synchrotron X-ray diffraction , 430
T
Tantalum (Ta) MM , 531
Telecommunication wavelengths , 265
Terahertz radiation detection
T-QDIP for , 675 – 676
TESi , 261
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