phase of V-oxide under the given experimental conditions of ultrahigh vacuum
experiments. A pertinent question of interest in relation to the physical and chemical
properties of the V
2
O
3
(0 0 0 1) surface is its surface termination. We have addressed
this question and have found, by a combined experiment–theory effort [102, 103],
that the most stable surface termination is a vanadyl V¼O terminated (1 1) surface.
This is remarkable, since V¼O groups are not VO coordination units contained in
the bulk V
2
O
3
corundum structure; they do occur, however, in the layered structure of
the V
2
O
5
bulk phase. The occurrence of vanadyl units as the most stable surface
termination of V
2
O
3
is clearly unexpected and of interest to the large field of V-oxide
catalysis. Apart from the vanadyl-terminated (1 1) surface, two other surface
terminations could be produced, a (H3 H3)R30
structure, containing V¼O
vacancies, and a V-terminated (1/H3 1/H3) surface, which requires highly
reducing preparation conditions [102, 103]. The lack of bulk-type V-oxide phases
on Rh(1 1 1) with an oxidation state higher than þ3 can be ascribed to kinetic effects,
that is, the limited speed of oxidation under the employed oxidation conditions
(oxygen pressures of max 10
6
mbar).
This limitation has recently been circumvented by Kuhlenbeck and coworkers [31,
32], who reported that highly oxidized V-oxide layers with V
6
O
13
and V
2
O
5
stoichio-
metries can be prepared on a Au(1 1 1) substrate, using a high-pressure cell, where
oxygen pressures of up to 50 mbar can be applied for in situ oxidation of V atoms.
At submonolayer to monolayer coverages, two well-ordered interface-stabilized
V-oxide structures have been observed in STM and LEED, with a V oxidation state
estimated to be close to þ5, according to NEXAFS spectra taken in the V L-edge and
O K-edge region [31]. By comparing the polarization dependence and the shape of
NEXAFS spectra from these monolayer films and from bulk V
2
O
5
(0 0 1) single
crystals, the authors concluded that the monolayer V
2
O
5x
structures should contain
V¼O groups and suggested that these are part of VO
5
building units, in close
similarity to the highly oxidized V
3
O
9
structures on Rh(1 1 1) [18]. After the
completion of the first layer, a two-layer V
6
O
13
(0 0 1)-like wetting film was observed
in STM [31], which is the precursor for the bulk-type V
2
O
5
(0 0 1) growth. The
V
2
O
5
(0 0 1) phase appears at a V coverage of approximately 1.5 ML in the form of
elongated 3D islands, rotationally aligned with the V
6
O
13
(0 0 1) wetting layer [31],
which eventually merge to form a continuous film [32]. Kuhlenbeck and co-
workers [32] have established that atomically flat and nearly defect-free V
2
O
5
(0 0 1)
overlayers can be prepared by cycles of successive Vdepositi on and pos toxidation, as
illustrated in the STM images in Figure 6.11a and b. The corresponding LEED
image (Figure 6.11c) shows a ring patte rn, indicating that the V
2
O
5
(0 0 1) domains
have a rand om azimuthal orientation, suggesting a weak film–substrate interaction.
The V
2
O
5
stoichiometry has been confirmed by XPS and angle-dependent NEXAFS.
The application of these techni ques was found, however, to lead to the for mation of
X-ray-induced O vacancies in the V
2
O
5
film, as revealed by S TM. Accordingly, O
vacancies were not randomly distributed on the surface, but as pairs or rows, as a
result of a concerted reduction process. The V
2
O
5
film was found to be thermally
stable upon annealing in UHV up to 500
C, starting to sublime above this
temperature, as revealed by temperature-prog rammed desorption (TPD) spectra.
6.3 Case Studies: Selected Oxide–Metal Systems
j
167