Zhang et al. [48] have recently measured the stability of bridging oxygen vacancies
on TiO
2
(1 1 0) using in situ STM. Sequences of STM images between 340 and 420 K
suggest that bridging oxygen vacancies migrate along the bridging oxygen row via the
slow diffusion of bridging oxygen atoms with a diffusion barrier of 1.15 eV, in
agreement with DFT calculations. All the above studies suggest that the surface
chemistry of TiO
2
(1 1 0) is dictated by bridging oxygen vacancies, which can account
for approximately10% of the bridging oxygen sites.
However, there are disagreements. Lyubinetsky et al. [49] studied the adsorption
of trimethylacetic a cid ((CH
3
)
3
CCOOH, TMAA), a photoreact ive molecul e, on
TiO
2
(110)atroomtemperature.In situ STM found that the deprotonation of
TMAA to form TMA does not necessarily occur at bridging oxygen vacancies. None
of the hydroxyl groups was found during the adsorption of TMAA. Instead, the
hydrogen a tom was bound to a pair of bridging oxygen atoms and stabilized by
the adjacent TMA groups sitting on the five -coordinated Ti trough. At saturation
coverage, TMAA formed a (2 1) overlayer on the TiO
2
(1 1 0) surface.
Wendt et al. [50] recently studied the interaction between O
2
and TiO
2
(1 1 0) surface
in detail and suggested that bridging oxygen vacancies are only the minor sites that
account for O
2
dissociation. Even though bridging oxygen vacancies account only for
approximately 10% of surface bridging oxygen sites, exposing the clean TiO
2
(1 1 0) to
a few Langmuirs ofO
2
could not fully remove all bridging oxygen vacancies. To isolate
the influence of bridging oxygen vacancies in O
2
dissociation, the authors created a
perfect TiO
2
(1 1 0) surface by exposing the TiO
2
(1 1 0) surface to water at room
temperature. Hydroxyl groups, formed via water dissociation, covered all bridging
oxygen vacancies, yielding a vacancy-free TiO
2
(1 1 0) surface (Figure 3.10a).
Figure 3.10c and d illustrates that O
2
exposure can fully remove surface hydroxyl
groups and create a TiO
2
(1 1 0) surface with perfect bridging oxygen rows, as
previously suggested in TPD studies [51]. With the titration of hydroxyl groups,
oxygen adatoms on the five-coordinated Ti row (O
ot
) also increase (Figure 3.10b).
However, the increase in oxygen adatoms does not seem to stop even after all the
hydroxyl groups have been replaced with oxygen (Figure 3.10c and d). Paired O
ot
atoms start to appear on the five-coordinated Tirow during extended O
2
exposure. On
the basis of these observations, the authors showed that a second and primary O
2
dissociation channel is operative on the five-coordinated Ti row.
STM results combined with photoelectron spectroscopy (PES) on the valence
state of TiO
2
(1 1 0) further show that the removal of all hydroxyl groups by oxygen,
leading to a perfect TiO
2
(1 1 0) surface, only slightly attenuates the Ti 3d defect
state (Figure3.10e). The full attenuation of Ti3d state requires 420 L of O
2
. Figure 3.9f
plots the evolutions of the Ti 3d defect state and the OH 3s state over O
2
exposure
and suggests the Ti 3d defect state is not mainly caused by bridging oxygen vacancies.
The authors suggest that other types of defects, Ti
3 þ
interstitials that form during
the reduction of TiO
2
(1 1 0) and are hidden beneath the surface, are primarily
responsible for the formation of the Ti 3d defect state and the dissociative adsorption
of O
2
.
Indeed, the importance of Ti
3 þ
interstitials has also been realized in previous in
situ STM studies of the reoxidation of TiO
2
(1 1 0) [52–54]. It is noted that Ti
3 þ
3.3 Visualizing the Pathway of Catalytic Reactions
j
69