5.8 Important diffraction geometries and diffraction symmetry 329
The number of active reflections depends on the unit cell size, the sample orientation and
the microscope acceleration voltage.
r
The zone axis orientation. If the incident beam is parallel to a crystal zone axis, then the
diffraction pattern in the objective lens back focal plane will be a two-dimensional pattern.
This is the so-called zone axis orientation, and the diffraction pattern is known as a zone
axis pattern or ZAP. If the zone axis is given by [uvw], then we can employ the duality
between real space and reciprocal space and the diffraction pattern will correspond to the
plane (uvw)
∗
in reciprocal space.
Each reflection in a ZAP can be indexed as an integer linear combination of two short
reciprocal lattice vectors, g
1
and g
2
. The number of contributing reflections need not be
the same along these two directions, and hence the general diffracted beam is described by
g = mg
1
+ ng
2
with m
min
≤ m ≤ m
max
and n
min
≤ n ≤ n
max
. In exact zone axis orientation we usually
have m
max
=−m
min
and similarly for n, so that the total number of diffraction spots is
equal to N = (2m
max
+ 1)(2n
max
+ 1). For materials with a large unit cell, there may
well be several hundred diffracted beams.
We can use the magnitude of the excitation error as a selection criterion for which
beams contribute to the multiple scattering process (i.e. all reflections for which
|s
g
|≤s
max
contribute). A general multi-beam simulation program must then allow for
the number of beams to depend on the actual beam orientation. This, in turn, obviates
the need for an adaptive algorithm that automatically determines which beams need to
be included in the simulation.
For both systematic row orientation and zone axis orientation, the relative orientation
of the beam and the crystal is commonly described by the Laue center, i.e. the projection
of the center of the Ewald sphere onto the reciprocal plane (uvw)
∗
.
In the following chapters, we will discuss the elastic scattering theory for all
three sample orientations, and, when possible, provide analytical expressions for
the beam intensities. Before we attempt to solve the general dynamical equations,
however, we must first discuss the symmetry of the diffraction process. As was
the case with crystallography, discussed in Chapter 1, the use of symmetry may
provide useful insights into the diffraction process, and may also allow us to create
fast algorithms to solve the dynamical equations.
The following sections are based on two landmark papers:
(i) Pogany and Turner [PT68]: Reciprocity in Electron Diffraction and Microscopy;
(ii) Buxton, Eades, Steeds, and Rackham [BESR76]: The Symmetry of Electron Diffraction
Zone Axis Patterns.
The reader is encouraged to read these original papers, as they provide the foun-
dation for all diffraction symmetry work. We will closely follow both papers, with
minor changes in notation where appropriate.