Neamen D. Microelectronics: Circuit Analysis and Design

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1329

APPENDIX

Standard Resistor

and Capacitor Values

In this appendix, we list standard component values, which are used for selecting

resistor and capacitor values in designing discrete electronic circuits and systems. Low-

power carbon and ﬁlm resistors with 2 percent to 20 percent tolerances have a standard

set of values and a standard color-band marking scheme. These tabulated values may

vary from one manufacturer to another, so the tables should be considered as typical.

C.1 CARBON RESISTORS

Standard resistor values are listed in Table C.1. The lightface type indicates 2 percent and

5 percent tolerance values; the boldface type indicates 10% tolerance resistor values.

Reliability

(optional)

1st digit

2nd digit

Multiplier

Tolerance

Red 2%

Gold 5%

Silver 10%

None 20%

Figure C.1 Color-band

notation of low-power

carbon-composition resistors

Table C.1 Standard resistance

values (×10

)

10 16 27 43 68

11 18 30 47 75

12 20 33 51 82

13 22 36 56 91

15 24 39 62 100

Discrete carbon resistors have a standard color-band marking scheme, which

makes it easy to recognize resistor values in a circuit or a parts bin, without having to

search for a printed legend. The color bands start at one end of the resistor, as shown

in Figure C.1. Two digits and a multiplier digit determine the resistor value. The ad-

ditional color bands indicate the tolerance and reliability. The digit and multiplier

color-code is given in Table C.2.

For example, the ﬁrst three color bands of a 4.7 k resistor are yellow, violet,

and red. The ﬁrst two digits are 47 and the multiplier is 100. The ﬁrst three color

bands on a 150 k resistor are brown, green, and yellow.

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Ten percent tolerance carbon resistors are available in the following power

ratings:

, 1, and 2 W.

C.2 PRECISION RESISTORS (ONE PERCENT

TOLERANCE)

Metal-ﬁlm precision resistors can have tolerance levels in the

percent to 1 percent

range. These resistors use a four-digit code printed on the resistor body, rather than

the color-band scheme. The ﬁrst three digits denote a value, and the last digit is the

multiplier for the number of zeros. For example, 2503 denotes a 250 k resistor, and

2000 denotes a 200  resistor. If the resistor’s value is too small to be described in

this way, an R is used to indicate the decimal point; for example, 37R5 is a 37.5 

resistor, and 10R0 is a 10.0  resistor.

The standard values typically range from 10  to 301 k. Standard values in

each decade are given in Table C.3.

1330 Appendix C Standard Resistor and Capacitor Values

Table C.3 Standard precision resistance values

100 140 196 274 383 536 750

102 143 200 280 392 549 768

105 147 205 287 402 562 787

107 150 210 294 412 576 806

110 154 215 301 422 590 825

113 158 221 309 432 604 845

115 162 226 316 442 619 866

118 165 232 324 453 634 887

121 169 237 332 464 649 909

124 174 243 340 475 665 931

127 178 249 348 487 681 953

130 182 255 357 499 698 976

133 187 261 365 511 715

137 191 267 374 523 732

Table C.2 Digit and multiple color code

Digit Color Multiplier Number of zeros

Silver 0.01 −2

Gold 0.1 −1

0 Black 1 0

1 Brown 10 1

2 Red 100 2

3 Orange 1 k 3

4 Yellow 10 k 4

5 Green 100 k 5

6 Blue 1 M 6

7 Violet 10 M 7

8 Gray

9 White

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Appendix C Standard Resistor and Capacitor Values 1331

Table C.4 Ceramic-disk capacitors

3.3 30 200 600 2700

5 39 220 680 3000

6 47 240 750 3300

6.8 50 250 800 3900

7.5 51 270 820 4000

8 56 300 910 4300

10 68 330 1000 4700

12 75 350 1200 5000

15 82 360 1300 5600

18 91 390 1500 6800

20 100 400 1600 7500

22 120 470 1800 8200

24 130 500 2000

25 150 510 2200

27 180 560 2500

Tantalum capacitors (×10

) (to 330 μF)

0.0047 0.010 0.022

0.0056 0.012 0.027

0.0068 0.015 0.033

0.0082 0.018 0.039

One percent resistors are often used in applications that require excellent stabil-

ity and accuracy; a small adjustable trimmer resistor may be connected in series to

the 1 percent resistor to set a precise resistance value. It is important to realize that

1 percent resistors are only guaranteed to be within 1 percent of their rated value

under a speciﬁed set of conditions. Resistance variations due to temperature or hu-

midity changes, and operation at full rated power can exceed the 1 percent tolerance.

C.3 CAPACITORS

Typical capacitor values for 10 percent tolerance capacitors from one manufacturer

are listed in Table C.4. The range of capacitance values for the ceramic-disk capaci-

tor is approximately 10 pF to

1 μF

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1333

Reading List

GENERAL ELECTRONICS TEXTS

Burns, S. G.; and P. R. Bond. Principles of Electronic Circuits. 2nd ed. Boston: PWS

Publishing Co., 1997.

Hambley, A. R. Electronics, 2nd ed. Upper Saddle River, NJ: Prentice-Hall, Inc.,

2003.

Hayt, W. H., Jr.; and G. W. Neudeck. Electronic Circuit Analysis and Design. 2nd ed.

Boston: Houghton Mifﬂin Co., 1984.

Horenstein, M. N. Microelectronic Circuits and Devices. 2nd ed. Englewood Cliffs,

NJ: Prentice Hall, Inc., 1995.

Horowitz, P.; and W. Hill. The Art of Electronics. 2nd ed. New York: Cambridge

University Press, 1989.

Howe, R. T.; and C. G. Sodini. Microelectronics: An Integrated Approach. Upper

Saddle River, NJ: Prentice-Hall, Inc., 1997.

Jaeger, R. C.; and T. N. Blalock. Microelectronic Circuit Design, 3rd ed. New York:

McGraw-Hill, 2008.

Malik, N. R. Electronic Circuits: Analysis, Simulation, and Design. Englewood

Cliffs, NJ: Prentice Hall, Inc., 1995.

Mauro, R. Engineering Electronics. Englewood Cliffs, NJ: Prentice Hall, Inc., 1989.

Millman, J.; and A. Graybel. Microelectronics. 2nd ed. New York: McGraw-Hill

Book Co., 1987.

Mitchell, F. H., Jr.; and F. H. Mitchell, Sr. Introduction to Electronics Design. 2nd ed.

Englewood Cliffs, NJ: Prentice-Hall, Inc., 1992.

Rashid, M. H. Microelectronic Circuits: Analysis and Design. Boston: PWS

Publishing Co., 1999.

Razaavi, B. Fundamentals of Microelectronics. New York: John Wiley and Sons,

Inc., 2008.

Roden, M. S.; and G. L. Carpenter. Electronic Design: From Concept to Reality.

3rd ed. Burbank, CA: Discovery Press, 1997.

Schubert, T., Jr; and E. Kim. Active and Non-Linear Electronics. New York: John

Wiley and Sons, Inc., 1996.

Spencer, R. R.; and M. S. Ghausi. Introduction to Electronic Circuit Design. Upper

Saddle River, NJ: Prentice-Hall, Inc., 2003.

Sedra, A. S.; and K. C. Smith. Microelectronic Circuits, 5th ed. New York: Oxford

University Press, 2004.

LINEAR CIRCUIT THEORY

Alexander, C. K.; and M. N. O. Sadiku. Fundamentals of Electric Circuits, 3rd ed.

New York: McGraw-Hill, 2007.

Bode, H. W. Network Analysis and Feedback Ampliﬁer Design. Princeton, NJ;

D. Van Nostrand Co., 1945.

Hayt, W. H., Jr.; J. E. Kemmerly; and S. M. Durbin. Engineering Circuit Analysis,

7th ed. New York: McGraw-Hill, 2007.

APPENDIX

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Irwin, J. D.; and R. M. Nelms. Basic Engineering Circuit Analysis, 9th ed. New

York: John Wiley and Sons, Inc., 2008.

Johnson, D. E.; J. L. Hillburn; J. R. Johnson; and P. D. Scott. Basic Electric Circuit

Analysis. 5th ed. Englewood Cliffs, NJ: Prentice Hall, Inc., 1995.

Nilsson, J. W.; and S. A. Riedel. Electric Circuits, 8th ed. Upper Saddle River, NJ:

Prentice-Hall, Inc., 2007.

Thomas, R. E.; A. J. Rosa; and G. J. Toussaint. The Analysis and Design of Linear

Circuits, 6th ed. New York: John Wiley and Sons, Inc., 2008.

SEMICONDUCTOR DEVICES

Neamen, D. A. An Introduction to Semiconductor Devices. Boston: McGraw-Hill, 2006.

Neamen, D. A. Semiconductor Physics and Devices: Basic Principles, 3rd ed.

Boston: McGraw-Hill, 2003.

Streetman, B. G.; and S. Banerjee. Solid State Electronic Devices, 6th ed. Upper

Saddle River, NJ: Prentice Hall, 2006.

Sze, S. M.; and K. K. Ng. Physics of Semiconductor Devices, 3rd ed. New York: John

Wiley and Sons, Inc., 2007.

Taur, Y.; and T. H. Ning. Fundamentals of Modern VLSI Devices. Cambridge, United

Kingdom: Cambridge University Press, 1998.

ANALOG INTEGRATED CIRCUITS

Allen, P. E.; and D. R. Holberg, CMOS Analog Circuit Design, 2nd ed. New York:

Oxford University Press, 2002.

Geiger, R. L.; P. E. Allen; and N. R. Strader. VLSI Design Techniques for Analog and

Digital Circuits. New York: McGraw-Hill Publishing Co., 1990.

Gray, P. R.; P. J. Hurst; S. H. Lewis; and R. G. Meyer. Analysis and Design of Analog

Integrated Circuits, 5th ed. New York: John Wiley and Sons, Inc., 2009.

Johns, D. A.; and K. Martin. Analog Integrated Circuit Design. New York: John

Wiley and Sons, Inc., 1997.

Laker, K. R.; and W. M. C. Sansen. Design of Analog Integrated Circuits and

Systems. New York: McGraw-Hill, Inc., 1994.

Northrop, R. B. Analog Electronic Circuits. Reading, MA: Addison-Wesley

Publishing Co., 1990.

Razavi, B. Design of Analog CMOS Integrated Circuits. Boston: McGraw-Hill, 2001.

Soclof, S. Design and Applications of Analog Integrated Circuits. Englewood Cliffs,

NJ: Prentice Hall, Inc., 1991.

Solomon, J. E. “The Monolithic Op-Amp: A Tutorial Study,” IEEE Journal of Solid-

State Circuits SC-9, No. 6 (December 1974), pp. 314–32.

Widlar, R. J. “Design Techniques for Monolithic Operational Ampliﬁers,” IEEE

Journal of Solid-State Circuits SC-4 (August 1969), pp. 184–91.

OPERATIONAL AMPLIFIER CIRCUITS

Barna, A.; and D. I. Porat. Operational Ampliﬁers. 2nd ed. New York: John Wiley

and Sons, Inc., 1989.

1334 Appendix D Reading List

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Appendix D Reading List 1335

Berlin, H. M. Op-Amp Circuits and Principles. Carmel, IN: SAMS, A division of

Macmillan Computer Publishing, 1991.

Clayton, G.; and B. Newby. Operational Ampliﬁers. London: Butterworth-

Heinemann, Ltd., 1992.

Coughlin, R. F.; and F. F. Driscoll. Operational Ampliﬁers and Linear Integrated Cir-

cuits. Englewood Cliffs, NJ: Prentice Hall, Inc., 1977.

Fiore, J. M. Operational Ampliﬁers and Linear Integrated Circuits: Theory and

Application. New York: West Publishing Co., 1992.

Franco, S. Design with Operational Ampliﬁers and Analog Integrated Circuits,

2nd ed. New York: McGraw-Hill, 1998.

Graeme, J. G.; G. E. Tobey; and L. P. Huelsman. Operational Ampliﬁers: Design and

Applications. New York: McGraw-Hill Book Co., 1971.

Helms, H. Operational Ampliﬁers 1987 Source Book. Englewood Cliffs, NJ: Prentice

Hall, Inc., 1987.

DIGITAL CIRCUITS AND DEVICES

Ayers, J. E. Digital Integrated Circuits: Analysis and Design. New York: CRC Press,

2004.

Baker, R. J.; H. W. Li, and D. E. Boyce. CMOS Circuit Design, Layout, and

Simulation. New York: IEEE Press, 1998.

CMOS/NMOS Integrated Circuits, RCA Solid State, 1980.

DeMassa, T. A.; and Z. Ciccone. Digital Integrated Circuits. New York: John Wiley

and Sons, Inc., 1996.

Glasford, G. M. Digital Electronic Circuits. Englewood Cliffs, NJ: Prentice Hall,

Inc., 1988.

Hauser, J. R., “Noise Margin Criteria for Digital Logic Circuits.” IEEE Transactions

on Education 36, No. 4 (November 1993), pp. 363–68.

Hodges, D. A.; H. G. Jackson, and R. A. Saleh. Analysis and Design of Digital

Integrated Circuits, 3rd ed. New York; McGraw-Hill, 2004.

Kang, S. M.; and Y. Leblebici. CMOS Digital Integrated Circuits: Analysis and

Design. 3rd ed. New York; McGraw-Hill, 2003.

Lohstroh, J. “Static and Dynamic Noise Margins of Logic Circuits,” IEEE Journal of

Solid-State Circuits SC-14, No. 3 (June 1979), pp. 591–98.

Mead, C.; and L. Conway. Introduction to VLSI Systems. Reading, MA: Addison-

Wesley Publishing Co., Inc., 1980.

Mukherjee, A. Introduction to nMOS and CMOS VLSI Systems Design. Englewood

Cliffs, NJ: Prentice Hall, Inc., 1986.

Prince, B. Semiconductor Memories: A Handbook of Design, Manufacture and

Applications. 2nd ed. New York: John Wiley and Sons, Inc., 1991.

Rabaey, J. M.; A. Chandrakasan, and B. Nikolic. Digital Integrated Circuits: A

Design Perspective, 2nd ed. Upper Saddle River, NJ: Prentice-Hall, 2003.

Segura, J.; and C. F. Hawkins. CMOS Electronics: How It Works, How It Fails.

Piscataway, NJ: IEEE Press, 2004.

Wang, N. Digital MOS Integrated Circuits. Englewood Cliffs, NJ: Prentice Hall,

Inc., 1989.

Wilson, G. R. “Advances in Bipolar VLSI.” Proceedings of the IEEE 78, No. 11

(November 1990), pp. 1707–19.

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1336 Appendix D Reading List

SPICE AND PSPICE REFERENCES

Banzhap, W. Computer-Aided Circuit Analysis Using PSpice. 2nd ed. Englewood

Cliffs, NJ: Prentice Hall, Inc., 1992.

Brown, W. L.; and A. Y. J. Szeto. “Verifying Spice Results with Hand Calculations:

Handling Common Discrepancies.” IEEE Transactions on Education, 37, No. 4

(November 1994), pp. 358–68.

Goody, R. W. MicroSim PSpice for Windows: Volume I: DC, AC, and Devices and

Circuits. 2nd ed. Upper Saddle River, NJ: Prentice-Hall, Inc., 1998.

Goody, R. W. MicroSim PSpice for Windows: Volume II: Operational Ampliﬁers and

Digital Circuits. 2nd ed. Upper Saddle River, NJ: Prentice-Hall, 1998.

Herniter, M. E. Schematic Capture with MicroSim PSpice. 3rd ed. Upper Saddle

River, NJ: Prentice-Hall, 1998.

Meares, L. G.; and C. E. Hymowitz. Simulating with Spice. San Pedro, CA: Intusoft,

1988.

MicroSim Staff. PSpice User’s Manual Version 4.03. Irvine, CA: MicroSim

Corporation, 1990.

Natarajan, S. “An Effective Approach to Obtain Model Parameters for BJTs and

FETs from Data Books.” IEEE Transactions on Education 35, No. 2 (May 1992),

pp. 164–69.

Rashid, M. H. SPICE for Circuits and Electronics Using PSpice. Englewood Cliffs,

NJ: Prentice Hall, Inc., 1990.

Roberts, G. W.; and A. S. Sedra. SPICE for Microelectronic Circuits. 3rd ed. New

York: Saunders College Publishing, 1992.

Thorpe, T. W. Computerized Circuit Analysis with SPICE. New York: John Wiley

and Sons, Inc., 1992.

Tront, J. G. PSpice for Basic Microelectronics with CD. New York: McGraw-Hill,

2008.

Tuinenga, P. W. SPICE: A Guide to Circuit Simulation and Analysis Using PSpice.

2nd ed. Englewood Cliffs, NJ: Prentice Hall, Inc., 1992.

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1337

Answers to Selected

Problems

CHAPTER 1

1.1 (a) Silicon

(i)

= 1.61 ×10

−3

(ii)

= 3.97 ×10

−3

(b) GaAs

(i)

= 6.02 ×10

−3

(ii)

= 1.09 ×10

−3

1.3 Silicon

(a)

= 8.79 ×10

−10

−3

(b)

= 1.5 ×10

−3

(c)

= 1.63 ×10

−3

Germanium

(a)

= 35.9cm

−3

(b)

= 2.40 ×10

−3

(c)

= 8.62 ×10

−3

1.5 (a) p-type,

= 10

−3

= 3.24 ×10

−4

−3

(b) p-type,

= 10

−3

= 5.76 ×10

−3

1.7 (a) p-type,

= 5 ×10

−3

= 4.5 ×10

−3

(b) p-type,

= 5 ×10

−3

= 6.48 ×10

−5

−3

1.9 (a)

= 5 ×10

−3

= 4.5 ×10

−3

(b) n-type

(c)

= 5 ×10

−3

1.11 (a)

I = 0.15

(b)

E = 2.4

V/cm

1.13 (a)

= 7.69 ×10

−3

(b)

E = 104

V/cm

1.15 (a)

1.36 ≤ σ ≤ 1.36 ×10

(

–cm)

−1

(b)

0.136 ≤ J ≤ 1.36 × 10

A/cm

1.17 (a)

= 2.4

A/cm

(b)

= 0.883

A/cm

(c)

= 0.119

A/cm

1.19 (a) (i) 0.661 V, (ii) 0.739 V, (iii) 0.937 V

(b) (i) 1.13 V, (ii) 1.21 V, (iii) 1.41 V

APPENDIX

1.21 For

= 10

−3

= 0.637

For

= 10

−3

= 0.817

1.23 (a)

= 0.255

(b)

= 0.172

(c)

= 0.139

1.25 (a)

= 6.57

MHz

(b)

= 7.95

MHz

(c)

= 8.86

MHz

1.27 (a) (i)

1.03 μ

A, (ii) 2.25 mA,

(iii) 4.93 A, (iv)

−5.37 × 10

−12

(v)

−10

−11

A, (vi)

−10

−11

(b) (i)

0.0103 μ

A, (ii)

22.5 μ

(iii) 49.3 mA, (iv)

−5.37 × 10

−14

(v)

−10

−13

A, (vi)

−10

−13

1.29 (a)

= 2.03 ×10

−15

(b) (i) At

= 0.1

= 9.50 ×10

−14

= 0.7

= 10

−3

(ii) At

= 0.1

= 1.39 ×10

−14

= 0.7

= 1.42 ×10

−9

1.31 (a)

V

∼

(b)

V

∼

120

1.33

0.5150 ≤ V

≤ 0.6347

1.35 (a) 2.31 nA,

5.05 μ

A, 11.1 mA,

−5.37 × 10

−23

−10

−22

−10

−22

(b) 115 pA,

0.253 μ

A, 0.554 mA,

−2.68 × 10

−24

−5 × 10

−24

−5 × 10

−24

1.37

(

100

)

(

−55

)

= 2.83 ×10

1.39

= 0.4740

mA,

= 0.5194

1.41 (a)

= I

= 1

mA,

(i)

= V

= 0.599

(ii)

= 0.617

= 0.557

(b) (i)

= V

= 0.581

= I

= 0.5

(ii)

= V

= 0.554

= 0.0909

mA,

= 0.909

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