
Chapter 17 Bipolar Digital Circuits 1277
17.3 TRANSISTOR–TRANSISTOR LOGIC
Objective: • Analyze transistor–transistor logic circuits
The bipolar inverter is the basic circuit from which most bipolar saturated logic cir-
cuits are developed, including diode–transistor logic (DTL) and transistor–transistor
logic (TTL). However, the basic bipolar inverter suffers from loading effects.
Diode–transistor logic combines diode logic (Chapter 2) and the bipolar inverter to
minimize loading effects. Transistor–transistor logic, which evolved directly from
DTL, provides reduced propagation delay times, as we will show.
In DTL and TTL circuits, bipolar transistors are driven between cutoff and satu-
ration. Since the transistor is being used essentially as a switch, the current gain is not
as important as in amplifier circuits. Typically, for transistors used in these circuits,
the current gain is assumed to be in the range of 25 to 50. These transistors need not
be fabricated to as tight a tolerance as that of high-gain amplifier transistors.
Table 17.3 lists the piecewise linear parameters used in the analysis of bipolar
digital circuits, along with their typical values. Also included is the pn junction diode
turn-on voltage
V
γ
. Generally, the B–E voltage increases as the transistor is driven
into saturation, since the base current increases. When the transistor is biased in the
saturation region, the B–E voltage is
V
BE
(sat)
, where
V
BE
(sat)>V
BE
(on)
.
Basic Diode–Transistor Logic Gate
The basic diode–transistor logic (DTL) gate is shown in Figure 17.20. The circuit is
designed such that the output transistor operates between cutoff and saturation. This
provides the maximum output voltage swing, minimizes loading effects, and pro-
duces the maximum noise margins. When
Q
o
is in saturation, the output voltage is
v
O
= V
CE
(sat)
∼
=
0.1V
and is defined as logic 0 for the DTL circuit. As we will see,
the basic DTL logic gate shown in Figure 17.20 performs the NAND logic function.
Basic DTL NAND Circuit Operation
If both input signals
v
X
and
v
Y
are at logic 0, then the two input diodes
D
X
and
D
Y
are forward biased through resistor
R
1
and voltage source
V
CC
. The input diodes
17.3.1
Table 17.3 Piecewise linear
parameters for a pn
junction diode and
npn bipolar transistor
Parameter Value
V
γ
0.7 V
V
BE
(on) 0.7 V
V
BE
(sat) 0.8 V
V
CE
(sat) 0.1 V
v
X
D
X
D
Y
v
Y
V
CC
= 5 V
v
O
v
1
R
C
= 4 kΩ
R
B
=
10 kΩ
Q
o
R
1
= 4 kΩ
i
2
D
2
i
B
i
R
i
RC
i
1
D
1
v
B
Figure 17.20 Basic diode–transistor logic gate
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