
Chapter 11 Differential and Multistage Amplifiers 837
produced when a differential-mode input voltage of
v
d
= v
1
−v
2
= 100
mV
is applied. (b) Using the results of part (a), determine the maximum possible
common-mode input voltage that can be applied such that the transistors re-
main biased in the saturation region.
11.50 Consider the small-signal equivalent circuit in Figure 11.23. Assume the
output is a two-sided output defined as
V
o
= V
d2
− V
d1
, where V
d2
and V
d1
are the signal voltages at the drains of M
2
and M
1
, respectively. Derive
expressions for the differential- and common-mode voltage gains.
11.51 Consider the MOSFET diff-amp with the configuration in Figure
P11.33. The circuit parameters are
V
+
= 3
V,
V
−
=−3
V, and
I
Q
= 0.2
mA. The transistor parameters are
V
TN
= 0.4
V,
k
n
= 100 μ
A/V
2
,
W/L = 10
, and
λ = 0
. The range of the common-
mode input voltage is to be
−1.5 ≤ v
cm
≤+1.5
V, and the common-
mode rejection ratio is to be
CMRR
dB
= 50
dB. (a) Design the diff-amp
to produce the maximum possible differential-mode voltage gain. (b)
Design an all MOSFET current source to produce the desired bias cur-
rent and CMRR. The minimum
W/L
ratio of any transistor is to be 0.8,
and assume
λ = 0.02 V
−1
for all transistors in the current source circuit.
11.52 Consider the bridge circuit and diff-amp described in Problem 11.27. The
BJT diff-amp is to be replaced with a MOSFET diff-amp as shown in Fig-
ure 11.19. The transistor parameters are
V
TN
= 0.4
V,
K
n
= 1
mA/V
2
,
and
λ = 0
. The bias voltages of the MOSFET diff-amp are
V
+
= 5
V and
V
−
=−5
V, and the reference current is
I
Q
= 0.2
mA. Let
R
D
= 20
k
.
Terminal A of the bridge circuit is to be connected to the gate of
M
1
and
terminal B is to be connected to the gate of
M
2
. (a) Determine the range of
output voltage
v
O
as
δ
changes. (b) Explain the advantages and disadvan-
tages of this circuit configuration compared to that in Problem 11.27.
*D11.53 Figure P11.53 shows a two-stage cascade diff-amp with resistive loads.
Power supply voltages of
±10
V are available. Assume transistor param-
eters of
V
TN
= 1V
,
k
n
= 60 μA/V
2
, and
λ = 0
. Design the circuit such
R
1
R
1
R
2
R
2
+10 V
–10 V
I
Q1
–10 V
I
Q2
v
2
v
o3
v
o2
v
o1
v
1
M
1
M
2
M
3
M
4
–+
v
out1
Figure P11.53
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