Yao N. Focused Ion Beam Systems: Basics and Applications
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Development engineers of this ultra-high speed hybrid device want to
perform device production inside the FIB tool. First, the FIB is used
to detach the ultra-high speed element from the substrate and the switch is
raised with micro-tweezers. Then the ultra-high speed element is moved
to the spot specified in the integrated circuit. This time, both connection
between the ultra-high speed element and integrated circuit and production
of insulation are possible by selecting the type of deposition film. The elec-
trical circuit connection of the ultra-high speed element and the integrated
circuit is performed by FIB by aerial wiring. If this technology was
developed, a stray capacitor of wire would be small enough to realize ultra-
high speed signal transmission, and will contribute to improved high-
frequency signal performance. However, aerial wiring is currently still in the
research and development stage.
Figure 14.45 introduces a part of fundamental research which realizes the
shape of an aerial wire by mixing carbon and tungsten [22]. Unfortunately,
conductivity suitable for this purpose cannot yet be achieved. The realization of a
high conductivity rate of the conductive film deposited by an FIB is being sought.
14.4.7 Nano lathe
A precision rotation stage with a small radial run out was installed on the
specimen stage of the FIB tool to produce a nano lathe [23]. As shown in
Figure 14.46, the rotation center of the precision rotation stage can be set to
be parallel or perpendicular to the ion beam.
As shown in both Figures 14.27 and 14.46, an overhung shape with a top
that is wider than its bottom or basement can be manufactured using 3D
deposition technology. The material used in this method is decided by ion
beam induced CVD.
1 µm
Figure 14.45 Wire basic experimentation in air. (Courtes y of University of
Hyogo and Fundamental Research Laboratory of NEC.)
Focused ion beam systems388
When we use the nano lathe, we can make a wide variety of shapes and use
a wide variety of materials. Figure 14.47 shows one example that can be made
using this method. The material used is carbon. During milling it was rotated
at 120 rpm.
14.5 Conclusions
Listed below are the essential points for the practical use of FIB in the field of
nanotechnology:
1. Stable control of sub-picoampere currents for microprocessing.
2. Drift correction for beam irradiation position stabilization.
3. 3D-CAD linkage.
4. Application of pattern recognition technology.
5. Effective use of gas.
Nanotechnology of FIB tools is still leading-edge technology, and there are
many items that need research and development. Nevertheless, in the field of
Parallel Vertical
Ion beam Ion beam
Rotation
Rotation
Tilt
x
xy
y
Figure 14.46 Diagram of a nano lathe.
2.7 µm
0.4 µm
Figure 14.47 A nano wine glass in carbon.
Focused ion beam systems as a multifunctional tool for nanotechnology 389
nanotechnology, the FIB tool is very attractive and its continued development
is desirable.
References
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Focused ion beam systems390
Index
3D characterization 126, 127
3D deposition 362, 373, 375, 382, 387, 388
3D etching 376
3D reconstruction 173, 234
3D shape 367, 374, 375, 382
3D-CAD 375, 376, 389
accelerated etching 359, 363, 376, 383
acceleration voltage 358, 363, 380 , 381
acquisition time 164
adaptive intermolecular Brenner potential
(AIREBO) 60
aerial wiring 388
AFM tip fabrication 67
alloy nanocluster 43
aluminum 70, 77
amorphization 44, 47, 197, 200, 201, 202, 203, 211,
212
amorphous layer 236, 237, 278
analysis 1
angular distribution 50
aspect ratio 83, 360, 361, 363, 382, 383
astigmatism 16, 19, 21
atom probe 128
atom probe analysis 234
atom probe tomography 149
atomic collision 32
atomic ionization 7
Auger de-excitation 95
Auger electron spectroscopy 295, 302, 313, 314
Auger neutralization 95
back-plane projections 296, 297
backscattered electron 24, 96, 147, 148, 152, 153,
162
backscattering 90
backscattering coefficient 103
beam booster 155
beam current 358, 363, 370
beam diameter 78
beam overlap 76, 78, 79, 269
beam scanning area 76
Bethe–Bloch equation 36
binary collision approximation 38, 101
binding effect 50
binding energy 69, 72
biological samples 71, 337, 338, 339, 341, 346, 348,
349, 350
black defect 355, 382
bombardment-induced segregation 46
broad ion beam milling 215, 242
BSE
I
153
BSE
II
153
bulk-plasmon excitation 99
CAD 84
carbon 77
carbon film 355, 365, 371
carbon wall 357, 385, 386
channeling 40, 276, 277, 328, 329, 357, 371, 372
channeling contrast 25, 102, 108
characteristic X-rays 7, 8
characterization 319, 320, 321, 322, 323
charge neutralization 289
charging 279, 282, 285, 288, 292
charging up 102, 114
chemical effect 53
chemical fixation 338, 339
chemical maps 296, 297, 299, 300, 301, 302, 303,
304, 305, 307, 308, 310, 313
chemisorb 70
chemisorption 68
chlorine, Cl
2
68, 70, 360
chromatic aberration 15, 16, 19, 20
chrome-on-glass (COG) 286
circuit edit 356, 373
circuit modification 67
classical collision scheme 101
cluster emission 53
cluster formation 40
cluster yield 55
cluster-ion incidence 58
coating 338, 341
collision cascades 236
collision of atoms 33
collision spike 46
391
cone-beam X-ray 296
continuous slow-down approximation 93
copper 77
crater formation 47
critical point drying 342
cross section 34, 272, 274, 356, 357, 358, 363, 368
CrossBeam 1, 146
crossover free beam path 155
cryotechniques 338, 342, 352
crystalline-to-amorphous transition 48
crystallization 44
current density 82, 83
curtain effect 219
DADOS 47
damage 238, 244, 380, 381
damage cross section 46
damage production 46
decelerated etching 359, 361, 372
decomposition yield 76
deconvolution algorithms 296
defect 47
defect diffusion 48
defect distribution 46
defect transport 46
dehydration 338, 341
delineation etching 73
density effect 50
deposited energy density 46
deposition 2, 3, 67, 188, 195, 196, 205, 207, 209,
210, 211
deposition rate 84
deposition time 83
deposition yield 76
depth profile of implanted ion 53
desorption 68
device transplantation 116, 119
dielectric response function 99
differential scattering cross section 35
differential sputtering 303, 304, 314
diffusion 318, 319
diffusion dominant ‘‘diffusive’’ 62
diffusion length of defect 48
direct sectioning methods 296, 297
direct writing 187, 188, 189, 193, 195, 207, 211
dissociation 76
doping 318
dosage 5
dose 318, 319, 320, 321, 322, 323, 328, 329
dose control 319, 323
dose rate 320, 324, 325, 327, 328, 329
dosimetry 319, 321, 323
dot blanking scan 365, 366, 371, 376
drift correction 379, 389
DualBeam 1, 126
dwell time 5, 76, 80, 81, 325, 326
dwell time per pixel 76
dynamic SASAMAL 53
DYNTRIM 46
EBSD 126, 146
EDS 126
EDX 251, 254, 264
EELS 252
effective-medium interaction potential 52
elastic collisions 3, 89, 92, 101, 103
elastic scattering 96, 99
electron attenuation length 152
electron backscatter diffraction 148, 177
electron backscatter diffraction analysis 233
electron beam lithography 2
electron cascade 102, 103
electron holography 233, 297
electron optics 5, 15
electron probe current 163
electron promotion 97, 100
electron scattering 154
electron sources 5, 10
electronic collision 32
electronic energy loss 36
electronic excitation 60
electron-induced secondary electron (SE) emission
96
electron–solid interactions 150
electrostatic lenses 16
elemental mapping 144, 301
embedment 338, 341
end-point 84
end-point detection 83, 84, 181
end point determination 139
energy and momentum conservation law 102
energy dispersive X-ray 302, 313, 314
energy distribution 50
energy filtering 160
energy loss 36, 40
energy of recoiled particle 35
energy of scattered particle 35
energy selective backscattering 160
enhanced diffusion 43
enhancement factor 72
escape depth 152
etch rate enhancements 68, 69, 71
etching 2, 67, 188, 192, 195, 196, 205, 206, 209, 210,
211
etching of carbon based materials 70
etching rate 73, 360, 361, 362, 375
etching speed 359, 360
ex-situ micromanipulator 234
ex-situ technique 217, 221
extractor 11
fabrication 1
failure analysis 67
FIB 126
FIB assist-deposition 116
FIB assisted metal deposition 251, 260, 265
FIB induced deposition 75, 76, 116
FIB micro-sampling technique 250
FIB microscopy 108
FIB milled cross section 87, 112
FIB milling 89, 338
FIB milling current 164
Index392
FIB milling time 250
FIB technique 250, 252, 260, 262, 263, 266, 267
FIB tomography 353
FIB-BSE 3D reconstruction 173
FIB-EBSD 177
FIB-EDS 3D reconstruction 173
FIB-SEM 3D reconstruction 146, 162, 170
FIB-STEM system 262, 266
field effect transistor 329, 331, 333
field emission guns 14
field ion microscope 297
fluid dynamics 54, 333
focused ion beam 1, 2, 87, 188, 189, 209, 210, 318,
319, 320, 322, 323, 325, 328, 329, 331
focused ion beam implantation 318, 319, 320, 321,
322, 323, 325, 326, 327, 328, 329, 331, 332,
333, 334
focused ion beam induced X-rays (FIBIX) 143
focused ion beam system 2
focused ion beam tomography 299, 300, 301, 302,
304, 313
freeze-drying 342
freeze-fracturing 350
freeze-substitution 352
Ga concentration 252, 254, 255
Ga implantation 238, 239, 240
gallium 386
gallium ion 7, 75, 358, 376
gas assisted etching (GAE) 217, 242, 359, 383
gas assisted focused ion beam deposition 75
gas assisted focused ion beam etching 68
gas assisted milling 282
gas crucible 78
gas enhanced ion etching 69
gas flux 76, 77, 78
gas injection needle 228
Gaussian beam profile 79
Gaussian distribution 7
G-Copy 384
glass needle 223
gold 77
halide 69, 70
H-bar technique 217
heat spike 47
high aspect ratio vias 68, 69, 83, 84
high-energy deposition 53
high-resolution TEM 225, 226, 241
high-voltage (HV) SEM imaging 120
hot liquid flow 47
image collection frequency 165
image deterioration 102, 114
imaging 1, 3
implantation 2, 3, 187, 195, 197, 198, 205, 206, 207,
209, 211, 252, 253, 255
implantation energy 324, 325, 329
incident angle dependence 106
inelastic collision(s) 3, 89, 93, 99, 101
inelastic mean free path 151
information depth 111
in-lens BSE detector 155
in-lens secondary detector 155
in-situ micromanipulator 227
in-situ technique 217, 226
insulator 99, 101, 114
insulator (TEOS) 77
insulator enhanced etch gas 84
integrated circuit 188
interaction volume 150
intermixing 238, 239
interstitials 236
inverse cosine law 106
iodine 70
ion beam 75
ion beam assisted deposition (IBAD) 75
ion beam current 76
ion beam induced CVD 355, 362
ion implantation 10, 40, 102, 318, 319, 320, 321
ion microscope 299, 300
ion optics 5, 15
ion reflection 197
ion source 10, 319, 355
ion–atom collision 2, 7
ion-beam mixing 44
ion-induced kinetic secondary electron emission 101
ion-induced secondary electron emission 95
ionization 12
iron 77
irradiation damage 252
irradiation effect 44
Kikuchi lines 177
kinetic emission 95
kinetic energy 16
lanthanum hexaboride 13
laser 321, 323, 332, 333
lateral resolution 296, 298, 299, 300, 301, 304, 313,
314
lateral straggle 323
lathe 388, 389
lens equation 18
life science applications of FIB 350
light optics 16
Lindhard dielectric function 99
Lindhard, Scharff, and Schiott (LSS) 36
Lindhard screening radius 37
linear collision cascade 38
linear interpolation 305, 308, 310
linear response theory 98
liquid-metal gallium 355
liquid-metal ion sources 2
lithographic technique 2
lithography 188, 189, 191, 194, 210, 211, 331
local pressure 76
longitudinal straggle 323, 328
Lorentz force 18
low energy milling 240
magnetic fields 16
manipulation 1
MARLOWE 40, 47
Index 393
mask repair 67, 355, 356, 370, 371, 373, 382, 385
mask(s) 188, 191, 192, 285, 288, 290, 291
material contrast 102
mechanical polish 250, 251
metal coating 251
metal deposition 251
metal needle 223
micro- and nano-machining 1
microexplosion 47
micro-machining 67
micromanipulator 223
micro-sampling (-sampling) 116, 122
micro-sectioning 341
milling 3, 188, 193, 194, 195, 197, 198, 200, 201,
202, 203, 204, 205, 209, 211, 212
molecular dynamics (MD) 38, 46, 53, 54, 58
molecular dynamics and Monte Carlo-corrected
effective medium potential (MD/MC-CEM)
57
molecular sputtering theory 346
Monte Carlo (MC) 38, 40, 42
Monte Carlo (MC) method 89, 198
Monte Carlo (MC) simulation 88, 101
nanocluster 40
nanocluster band 44
nanocrystal 40, 44
nanocrystal formation 46
nano-fabrication 187, 198, 201, 209, 210, 212
nanoimprint 385, 387
nanostructure(s) 40, 188, 193, 195, 197, 201, 205,
207, 208, 209, 212
nanotechnology 1
nanotomography 146
negative spherical aberration 20
noble gas 74
noble gas ion sources 74
nonlinear effect 46
nonlinear response theory 98
nonlinear sputtering 47
nuclear collision 32
nuclear energy loss 36, 37
OKSANA 50
optical proximity correction (OPC) 290, 291
optical-data model 99
osmium tetroxide 339, 340
overlap 78, 80, 81
palladium 77
partial wave expansion 99
particle induced X-ray emission (PIXE) 127, 298
pattern size 76
patterns 67
penetration depth 7, 8
phase shift 98
phonon 197, 332
pillar 374, 375
pixel 76, 358, 359, 365, 366, 367
pixel size 165
pixel spacing 269, 270
plan-view lamella 231
platinum 77
PMMA 71
polymers 70
position correction 378
positive spherical aberration 20
post-implantation treatment 45
potential emission 95
precursor 76
precursor gases 77
preferential etching 68
preferential milling 216, 237, 244
preferential sputtering 53
preparation of specimens 215
pre-thinning 250
projected mean range 39
projected range straggling 39
projection methods 296
projection printing 187, 188, 189
prototyping 183
Pt strap 219
quantum computing 333
quantum dot 61
quantum-well layer 48
radiation enhanced diffusion 60
radiation irradiation 40
Radon transform 296, 297
range 39, 40, 90, 323
range straggling 39
rapid prototyping 146
raster 78
raster loop time 76
raster refresh time 76
raster scan 364, 365
recoil implantation 46
redeposition 197, 200, 201, 202, 203, 209, 211, 212,
220, 221, 237, 244, 273, 276, 367, 376
resistivity 84
resists 187, 188, 191, 193, 211
resonance neutralization 95
Richardson’s law 13
ripple formation 60
ripple morphology 61
rotation stage 388
sample damage 75, 250
scan speed 358
scanning electron microscope (SEM) 87
scanning electron microscopy 80, 126, 295, 298,
304, 309, 313, 314, 355, 356, 357, 358
scanning force microscope 298
scanning ion microscope (SIM) 87, 127, 254, 261,
262, 378, 379, 380
scanning probe microscope 381
scanning probe microscopy 234
scanning TEM (STEM) 87, 127, 254, 261, 262, 378,
379, 380
scanning transmission ion microscope 295
scattering angle 34
Index394
Schottky barrier 160
Schottky field emitter 155
scintillator photomultiplier tube 24
screened Rutherford formula 99
script language 366, 367, 368
SE
1
electron 153
SE
2
electron 153
secondary electron(s) (SE) 3, 24, 84, 88, 356, 357,
358, 362, 363, 365, 370, 371, 372, 373, 374
secondary electron emission 95
secondary electron image 102
secondary electron (SE) yield 96
secondary ion(s) 3, 356, 357, 358, 371, 372, 373
secondary ion mass spectrometers 25
secondary ion mass spectrometry 295, 298, 300,
302, 303, 304, 305, 308, 310, 313, 314
secondary ion mass spectroscopy 353
segregation 237
selected etching 360
self-organizing process 61
SEM image 88, 102
SEM imaging 89
semiconductor 2, 319, 329
serial sectioning 129, 297, 298, 300, 301, 314, 351
shape based interpolation 296, 305, 307, 308, 309,
310, 312, 313
shock wave 46, 57
SiF
2
69
Sigmund’s model 38
Sigmund–Thompson distribution 51
silicon dioxide 77
SIM image 87, 102, 252
SIM imaging 89
SIMS 144
single ion implantation 333
single scattering model 90
Slice and View 129
spatial resolution 111, 296, 297, 298, 299, 300, 301,
302, 303, 304
spherical aberration 16, 19
SPI mode 126
spike 53
spike effect 46
spontaneous etching 68, 69, 70
spot size 78, 79
sputter etching 356, 358, 359, 360, 361, 367, 370,
376, 380, 382, 383, 385
sputter yield(s) 197, 198, 199, 200, 270, 272
sputtering 68, 197, 198, 199, 200, 201, 204, 211,
270, 272, 276
sputtering dominant ‘‘erosive’’ 62
sputtering mechanism for nonmetal 60
sputtering yield 50, 76
SRIM 37, 40
staining 338, 341
step size 78
stereolithographic printing 172
stochastic nonlinear continuum equation 61
stopping power 36, 93, 98
stovepipe needle 85
structure property relationships 295
structure-composition-processing-property 1
support disk 251
suppressor 12
surface barrier 96, 100
surface channeling 200
surface damage 102
surface modification 67
surface morphology 61
synchrotron source 296
tantalum 77
taper 382, 383, 384
Taylor cone 11
TEM grid 224
TEM sample(s) 75, 357, 362, 377, 378, 379, 380, 383
TEM sample preparation 67, 182, 250, 251, 258,
260, 262, 264, 266
thermal spike 54
thermal wave 321, 323
thin film 355, 362
Thomas–Fermi atomic model 32, 35, 36
Thomas–Fermi screened potential 33
three-stage process 96
threshold energy for kinetic emission 100
tomography 127
topographic contrast 102, 105
topography 298, 300, 301, 356, 357
total path length 90
transient enhanced diffusion (TED) 48
transmission electron microscope (TEM) 87
transmission electron microscopy 128, 295, 297,
298, 300, 377, 378, 380
TRIDYN 53
true low-energy secondary electron SE 96
tungsten 70, 77
tungsten film 356, 363
tungsten pillar 382
two-beam FIB 1, 4
ultramicrotomy 350
vacancies 216
Van der Waals forces 8
vector scan 364, 365, 366, 375
vertical resolution 299, 304, 313, 314
voxel 134, 299, 303, 305, 307, 308
water, H
2
O 360, 361, 362, 372
waveguide 331, 332
welded 215, 229
WF
6
70
white defect 355, 370, 371, 382
work function 12, 13
XeF
2
68, 360, 361, 363, 376
X-ray tomography 296
yield 229
Z-contrast image 160
Index 395