in a partially stabilized zirconia. Scandium has been found to give a material with
a higher conductivity, which is particularly valuable at lower temperatures. From
the fact that the conductivity reaches its maximum at an intermediate
concentration of lower-valence ions, it appears that only a fraction of the
vacant O
2
sites contribute to O
2
mobility when the concentration of vacant
sites is high. Ions of variable valence need to be excluded if the electronic
conductivity is to be minimized. Thorium is added to yttria-containing bodies as
a grain growth inhibitor.
For refractory applications, when the ‘mixed oxide’ route is followed,
temperatures as high as 1900 8C are necessary to sinter to high density. The
high interest in SOFCs has stimulated efforts to develop novel fabrication routes
to zirconia ceramics and yttria-stabilized sub-micron sized powders have been
prepared which sinter to 95% theoretical density at a temperature as low as
1150 8C [4].
Chemically prepared, highly reactive and uniform zirconia powders are
commercially available. One production route is the co-precipitation of a mixed
solution of ZrOCl
2
(derived from zircon) and YCl
3
(derived from yttria) solution
followed by calcinations, milling and spray-drying. The best commercially
available, chemically prepared, powders of 8% Y
2
O
3
/ZrO
2
(8YSZ) can be
sintered to full density at 1400 8C.
Careful attention has to be given to the purity of the precursors to avoid
detrimental effects on conductivity. In a polycrystalline ceramic the conductiv-
ities of grain boundaries and bulk contribute to overall conductivity. In the case
of polycrystalline YSZ, because of its unusually high intrinsic (bulk) conductivity
the grain boundaries are far less conductive than the crystal, typically by a factor
of 100. The effect the grain boundaries have on overall conductivity will
depend on grain size and, of course, on impurity content (e.g. silica), since
impurities tend to concentrate there. It is the effort to understand more of the
various contributors to overall conductivity which has led to the application of
impedance spectroscopy (see Section 2.7.5).
b@-alumina The b-aluminas are a family of non-stoichiometric aluminates of
which the most important have the approximate formulae equivalent to
Na
2
O11Al
2
O
3
(b-alumina), and Na
2
O5Al
2
O
3
(b@-alumina). They have a layer
structure (Fig. 4.30 (a)) with layers approximately 1 nm thick consisting of blocks
of close-packed O
2
ions in which the Al
3þ
ions occupy octahedral and
tetrahedral interstices in the same arrangement as the Mg
2þ
and the Al
3þ
in the
spinel structure. The spinel layers are separated by mirror planes containing Na
þ
and O
2
ions. The Na
þ
ions can move quite freely within this plane with the sort
of concerted motion indicated in Fig 4.30(b); as a result the conductivity is high
in these planes but negligible in the perpendicular direction.
It is instructive to write the compositions of the b- and b@-aluminas with the
oxygen lattice content the same in both cases, that is Na
3
Al
33
O
51
and
FUEL CELLS AND BATTERIES 187